Temperature dependence of thermophysical properties of GaAs/AlAs periodic structure

Yu, Xiaoyang; Chen, Gang; Verma, Ashish; Smith, J. S.

doi:10.1063/1.114919

Cited by 146 publications

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“…1,2 A number of recent experimental 3,4,5,6,7,8,9 and theoretical 10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35 studies contributes to an emerging understanding of interesting science issues and potential technology problems.…”

Section: Introductionmentioning

confidence: 99%

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Phonon Knudsen flow in nanostructured semiconductor systems

Ziambaras¹,

Hyldgaard²

2006

Journal of Applied Physics

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We determine the size effect on the lattice thermal conductivity of nanoscale wire and multilayer structures formed in and by some typical semiconductor materials, using the Boltzmann transport equation and focusing on the Knudsen flow effect. For both types of nanostructured systems we find that the phonon transport is reduced significantly below the bulk value by boundary scattering off interface defects and/or interface modes. The Knudsen flow effects are important for almost all types of semiconductor nanostructures but we find them most pronounced in Si and SiC systems due to the very large phonon mean-free paths. We apply and test our wire thermal-transport results to recent measurements on Si nanowires. We further investigate and predict size effects in typical multilayered SiC nanostructures, for example, a doped-SiC/SiC/SiO 2 layered structure that could define the transport channel in a nanosize transistor. Here the phonon-interface scattering produces a heterostructure thermal conductivity smaller than what is predicted in a traditional heat-transport calculation, suggesting a breakdown of the traditional Fourier analysis even at room temperatures. Finally, we show that the effective thermal transport in a SiC/SiO 2 heterostructure is sensitive to the oxide depth and could thus be used as an in-situ probe of the SiC oxidation progress.

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Section: Introductionmentioning

confidence: 99%

“…In this paper we illustrate the general nature of this Knudsen effect on the effective lattice thermal conductivity of semiconductor devices by documenting the effects on two simple sample structures: thin semiconducting wire 3,15,16,17,19,20,21,48 and multilayered systems, 4,5,6,7,10,11,12,13,14,35,47 Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Phonon Knudsen flow in nanostructured semiconductor systems

Ziambaras¹,

Hyldgaard²

2006

Journal of Applied Physics

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“…[14, 37-39] The reduction mainly comes from the high frequency phonons, which are sensitive to the vacancy [37]. With MD simulations, it is found that the thermal conductivities of diamond and carbon nanotubes decrease as the vacancy concentration increase with an inverse power law relation, Some experimental and theoretical works [40][41][42][43][44] have been carried out to study the effects of interface and superlattice period on thermal conductivity of various kinds of superlattice structures. Results show that superlattice structures are an efficient way to get ultra low thermal conductivity.…”

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confidence: 99%

Ultralow Thermal Conductivity of Isotope-Doped Silicon Nanowires

2007

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The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature. The thermal conductivity reaches the minimum, which is about 27% of that of pure 28 Si NW, when doped with fifty percent isotope atoms. The thermal conductivity of isotopic-superlattice structured SiNWs depends clearly on the period of superlattice. At a critical period of 1.09 nm, the thermal conductivity is only 25% of the value of pure Si NW. An anomalous enhancement of thermal conductivity is observed when the superlattice period is smaller than this critical length. The ultra-low thermal conductivity of superlattice structuredSiNWs is explained with phonon spectrum theory.

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“…A comprehensive examination of the latter effect can be found in review articles by Swartz and Pohl [5] and Cahill [6]. Some researchers have measured the interface resistance by studying the thermal transport properties of metal/metal [7,8], metal/oxide [9], oxide/oxide [10] or semiconductor/semiconductor [11,12,13,14,15,16] multilayer films. Unlike techniques using single layer films, experiments using multilayers can separate interface effects from those due to total film thickness, e.g.…”

mentioning

confidence: 99%

Thermal transport through thin films: Mirage technique measurements on aluminum/titanium multilayers

et al. 2000

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Thermal transport properties of multilayer thin films both normal and parallel to the layers have been measured. Al/Ti multilayer films 3 µm thick, with individual layers systematically varied from 2.5 nm to 40 nm, were studied on Si substrates. Layers of Al and Ti were nominally equal in thickness, with actual composition determined for each specimen using energy dispersive spectroscopy. The thermal diffusivity both in the plane and normal to the plane of the films (thermal conductivity divided by specific heat per volume) was found to decrease significantly with decreasing bilayer thickness. Pure Ti and Al films as well as Cu films from 0.1 to 5 µm thick were also studied. In plane electrical conductances of the Al/Ti multilayers were also measured. INTRODUCTIONIt is generally recognized that thermal transport properties of thin films can be less than half those of bulk materials [1,2,3,4]. This decrease can arise from modifications within the bulk of the films (i.e., high defect density or low mass density) or an interface thermal resistance. A comprehensive examination of the latter effect can be found in review articles by Swartz and Pohl [5] and Cahill [6]. Some researchers have measured the interface resistance by studying the thermal transport properties of metal/metal [7,8], metal/oxide [9], oxide/oxide [10] or semiconductor/semiconductor [11,12,13,14,15,16] multilayer films. Unlike techniques using single layer films, experiments using multilayers can separate interface effects from those due to total film thickness, e.g. systematic measurement errors. Discussion and analysis of experimental data utilizing models of the scattering at the interfaces exist in the literature [17,18,19].To our knowledge, this work is the first time that anisotropic thermal transport properties of multilayer thin films have been measured using the Mirage technique; the only other published measurement of anisotropic properties was accomplished using ac-calorimetry [15]. By studying films with a range of bilayer thickness, it has been possible to systematically examine the effect of the interfaces on the anisotropic thermal diffusivity. Most of the cited studies used techniques that restricted their measurements to in-plane thermal diffusivities, though a few used transient reflection [8,16] or transmission techniques [7,9], or simplified mirage [12] that were limited to studying the diffusivity normal to the film surface. The Mirage technique utilized here is capable of measuring the thermal diffusivity at room temperature in both the normal and in-plane directions.The theory for the Mirage technique measurements used here has been outlined in several publications [20,21,22], including a later correction [23] of the theory required due to errors in the earlier analyses. In this technique, a focused heating laser aligned normal to the specimen surface is used to heat a spot on the surface of the specimen (see Fig. 1). Temporal modulation of the laser intensity results in oscillatory temperature distributions both in ...

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Temperature dependence of thermophysical properties of GaAs/AlAs periodic structure

Cited by 146 publications

References 0 publications

Phonon Knudsen flow in nanostructured semiconductor systems

Phonon Knudsen flow in nanostructured semiconductor systems

Ultralow Thermal Conductivity of Isotope-Doped Silicon Nanowires

Thermal transport through thin films: Mirage technique measurements on aluminum/titanium multilayers

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