Potassium intercalation in graphite is investigated by first-principles theory. The bonding in the potassium-graphite compound is reasonably well accounted for by traditional semilocal density functional theory (DFT) calculations. However, to investigate the intercalate formation energy from pure potassium atoms and graphite requires use of a description of the graphite interlayer binding and thus a consistent account of the nonlocal dispersive interactions. This is included seamlessly with ordinary DFT by a van der Waals density functional (vdW-DF) approach [Phys. Rev. Lett. 92, 246401 (2004)]. The use of the vdW-DF is found to stabilize the graphite crystal, with crystal parameters in fair agreement with experiments. For graphite and potassium-intercalated graphite structural parameters such as binding separation, layer binding energy, formation energy, and bulk modulus are reported. Also the adsorption and sub-surface potassium absorption energies are reported. The vdW-DF description, compared with the traditional semilocal approach, is found to weakly soften the elastic response.

A new method for direct evaluation of both crystalline structure, bulk modulus B0, and bulkmodulus pressure derivative B ′ 0 of solid materials with complex crystal structures is presented. The explicit and exact results presented here permit a multidimensional polynomial fit of the total energy as a function of all relevant structure parameters to simultaneously determine the equilibrium configuration and the elastic properties. The method allows for inclusion of general (internal) structure parameters, e.g., bond lengths and angles within the unit cell, on an equal footing with the unit-cell lattice parameters. The method is illustrated by the calculation of B0 and B ′ 0 for a few selected materials with multiple structure parameters for which data is obtained by using first-principles density functional theory.

We determine the size effect on the lattice thermal conductivity of nanoscale wire and multilayer structures formed in and by some typical semiconductor materials, using the Boltzmann transport equation and focusing on the Knudsen flow effect. For both types of nanostructured systems we find that the phonon transport is reduced significantly below the bulk value by boundary scattering off interface defects and/or interface modes. The Knudsen flow effects are important for almost all types of semiconductor nanostructures but we find them most pronounced in Si and SiC systems due to the very large phonon mean-free paths. We apply and test our wire thermal-transport results to recent measurements on Si nanowires. We further investigate and predict size effects in typical multilayered SiC nanostructures, for example, a doped-SiC/SiC/SiO 2 layered structure that could define the transport channel in a nanosize transistor. Here the phonon-interface scattering produces a heterostructure thermal conductivity smaller than what is predicted in a traditional heat-transport calculation, suggesting a breakdown of the traditional Fourier analysis even at room temperatures. Finally, we show that the effective thermal transport in a SiC/SiO 2 heterostructure is sensitive to the oxide depth and could thus be used as an in-situ probe of the SiC oxidation progress.

SiC is a robust semiconductor material considered ideal for high-power application due to its material stability and large bulk thermal conductivity defined by the very fast phonons. In this paper, however, we show that both material-interface scattering and total-internal reflection significantly limit the SiC-nanostructure phonon transport and hence the heat dissipation in a typical device. For simplicity we focus on planar SiC nanostructures and calculate the thermal transport both parallel to the layers in a substrate/SiC/oxide heterostructure and across a SiC/metal gate or contact. We find that the phonon-interface scattering produces a heterostructure thermal conductivity significantly smaller than what is predicted in a traditional heat-transport calculation.We also document that the high-temperature heat flow across the metal/SiC interface is limited by total-internal reflection effects and maximizes with a small difference in the metal/SiC sound velocities.

We present density functional theory (DFT) calculations for 6H-SiC{0001} surfaces with different surface stackings and terminations. We compare the relative stability of different ( 0001) and (000 1) surfaces in terms of their surface free energies. Removing surface and subsurface Si atoms, we simulate the formation of graphene and graphene-like overlayers by Si evaporation. We find that overlayers with a different nature of bonding are preferred at the two non-equivalent surface orientations. At (0001), a chemically bonded, highly strained and buckled film is predicted. At (000 1), a van der Waals (vdW) bonded overlayer is preferred. We quantify the vdW binding and show that it can have a doping effect on electron behavior in the overlayer.

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