Temperature dependence of the resistivity of amorphous indium oxide

Bellingham, J.R.; Graham, Mark R.; Adkins, C. J.; Phillips, W. A.

doi:10.1016/s0022-3093(05)80169-3

Cited by 22 publications

(6 citation statements)

References 7 publications

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“…For example, at 1.6 GPa (Fig. 7) the resistance at zero magnetic field saturates at ~ 4 kΩ, which implies a resistivity of ~1 Ω-cm, much larger than ~0.03 Ω-cm, which is the expected metal to insulator transition for amorphous InOx [19]. For such high resistivities normal InOx strongly diverges with decreasing temperature.…”

Section: Discussion and Analysis Of The Resultsmentioning

confidence: 95%

Superconductor–insulator transition in two-dimensional indium–indium-oxide composite

Hen

Zhang

Shelukhin

et al. 2020

Proc. Natl. Acad. Sci. U.S.A.

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The magnetic-field–tuned superconductor-to-insulator transition was studied in a hybrid system of superconducting indium islands, deposited on an indium oxide (InOx) thin film, which exhibits global superconductivity at low magnetic fields. Vacuum annealing was used to tune the conductivity of the InOx film, thereby tuning the inergrain coupling and the nature of the transition. The hybrid system exhibits a “giant” magnetoresistance above the magnetic-field–tuned superconductor-to-insulator transition (H-SIT), with critical behavior similar to that of uniform InOx films but at much lower magnetic fields, that manifests the duality between Cooper pairs and vortices. A key feature of this hybrid system is the separation between the quantum criticality and the onset of nonequilibrium behavior.

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Section: Discussion and Analysis Of The Resultsmentioning

confidence: 95%

Superconductor–insulator transition in two-dimensional indium–indium-oxide composite

Hen

Zhang

Shelukhin

et al. 2020

Proc. Natl. Acad. Sci. U.S.A.

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“…There is clearly a metal-insulator transition somewhere between the most metallic film, No 1, and the most insulating film, No 20. Figure 2 shows the room temperature resistivities of the films including those of Bellingham [18,19] versus electron carrier concentration n, deduced from the Hall voltage measurements. The fit excludes the two points having the highest carrier concentrations.…”

Section: Experimental Results and The Determinations Of The Metal-ins...mentioning

confidence: 99%

Experimental study of the Ioffe-Regel criterion for amorphous indium oxide films

Graham

Adkins

Behar

et al. 1998

J. Phys.: Condens. Matter

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The Ioffe-Regel criterion predicts the existence of a metal-insulator transition in a film series when the parameter satisfies the criterion ; here is the Fermi wavenumber and is the elastic mean free path of the carriers. According to this criterion, films having are metallic, while films having are insulating. We experimentally observe the metal-insulator transition in amorphous indium oxide films at . The values of were calculated from room temperature resistivity and Hall voltage measurements, while the metal-insulator transition was determined from low-temperature resistivity data using the `w'-criterion of Mobius and of Zabrodskii and Zinov'eva.

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“…For the In 2 O 3 films, taking r ≈ 8.9 [28] and m * = 0.35m e [22] (m e is the free electron mass), one can get n c ≈ 7.2 × 10 18 cm −3 . However, several groups found that the onset of metal behavior of n c for In 2 O 3 is larger than 7.2 × 10 18 cm −3 , e.g., both Bellingham et al [29] and Nakazawa et al [26] found the value of n c is ∼1 × 10 19 cm −3 . For our films, the as-deposited 6.3 nm film with carrier concentration 1 × 10 19 cm −3 reveals insulator behavior, which indicates the value of n c is greater than 1 × 10 19 cm −3 for the In 2 O 3 films.…”

Section: Papermentioning

confidence: 99%

The variation of electrical transport properties with thickness for ultrathin indium oxide films

Jiang

Yang

Zhang

et al. 2017

Physica Status Solidi (b)

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We have systematically investigated the electrical transport properties of a series of In2O3 films (with thickness t ranging from ∼4 to ∼45 nm) grown on yttrium stabilized ZrO2 single crystal substrates. Those tthinmathspace≳thinmathspace11.5nm films reveal metallic characteristics in electrical transport properties, and electron–electron interaction effects govern the low temperature behaviors of the resistivity. For the 6.3 and 3.7 nm thick films, the resistivities variation with temperature [ρfalse(Tfalse)] curves show insulator behaviors in the whole measured temperature range (2–300K). In addition, the two‐dimensional (2D) Mott type variable‐range‐hopping (VRH) dominates the temperature behavior of resistivity in the temperature range Tcross≲thinmathspaceTthinmathspace≲thinmathspace80thinmathspacenormalK, and a crossover to the 2D Efros–Shklovskii (ES) VRH occurs below Tcross. Our results are quantitatively consistent with the theoretical predications of the 2D Mott‐VRH and 2D ES‐VRH theories in the corresponding temperature regions.

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Temperature dependence of the resistivity of amorphous indium oxide

Cited by 22 publications

References 7 publications

Superconductor–insulator transition in two-dimensional indium–indium-oxide composite

Superconductor–insulator transition in two-dimensional indium–indium-oxide composite

Experimental study of the Ioffe-Regel criterion for amorphous indium oxide films

The variation of electrical transport properties with thickness for ultrathin indium oxide films

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