Temperature dependence of the red shift and broadening of the exciton line in CdSe/GaAs laser ablated heterostructures

Optical properties of Zn0.5Cd0.5Se thin films grown on InP by molecular beam epitaxy

“…Therefore, we expect that the high temperature performance of the devices based on Zn x Cd 12x Se materials will be significantly less affected by the electron (exciton) -LO phonon interaction than the performance of the devices based on the Al x Ga y In 12x2y N and Zn x Mg 12x O alloys. The estimated value of the impurity ionization energy (9.3 meV) is comparable to the previously reported for CdSe (9.4 meV) [20] and reasonable for shallow donors in II-VI alloys. For example, the ionization energy of persistent donor in ZnTe was estimated to be around 17.4 meV [23].…”

“…Therefore, it is interesting to compare the value of electron (exciton) -LO phonon interaction in Zn 0.5 Cd 0.5 Se with those in other wide band gap semiconductors. The following G LO values were reported: 17 meV for CdTe [18], 41 meV for CdS [18], 81 meV for ZnSe [19], 49 meV for CdSe [20], 876 meV for ZnO [21], and 525 meV for GaN [22]. The value of electron (exciton) -LO phonon interaction in Zn 0.5 Cd 0.5 Se is comparable to the values reported for the II-S, Se, Te-based semiconductors and significantly smaller the values reported for oxides and nitrides.…”

Temperature dependence of excitonic emission in cubic CdSe thin film

“…The LO-phonon energy was set at 305 K. The G 0 and G ac parameters were first determined from the fitting at To40 K. The best fit yields G 0 ¼ 5.5 meV, G ac ¼ 84 meV/K and G LO ¼ 20 meV. It is interesting to compare the exciton-LO phonon interaction strength with other semiconductors, since this parameter related to the stability of exciton at high T. In comparison with the hexagonal CdSe (49 meV) [23], the exciton-LO phonon coupling of the cubic CdSe is weaker, consistent with the results discussed above. Nevertheless, a study of exciton PL linewidth as a function of T for wurzite and zinc-blende GaN shows a reverse result [24], where the G LO of cubic GaN is larger than that of the hexagonal one.…”

<title>Laser ablation and deposition of CdSe and CdS on GaAs substrate</title>

“…The film tickness was measured by a prifilometer. 6 The excitonic line shifts to lower energies as the T is increased. Fig.…”