Temperature dependence of the radiative lifetime in GaN

Brandt, O.; Ringling, J.; Ploog, K.; Wünsche, H.‐J.; Henneberger, F.

doi:10.1103/physrevb.58.r15977

Cited by 94 publications

(84 citation statements)

References 11 publications

(17 reference statements)

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“…An accurate quantitative analysis is complicated since the time dependencies of the concentrations for carriers, excitons, and neutral donors have to be described using a set of nonlinear differential equations presented, for example, in Ref. 26. However, the analytical expression for the radiative lifetime in Ref.…”

Section: Modeling Of the Dbe Pl Transient Resultsmentioning

confidence: 99%

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

et al. 2011

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Freestanding n-type intentionally doped GaN layers grown by halide vapor phase epitaxy (HVPE) were studied by transient photoluminescence (PL). Concentrations of silicon and oxygen were varied in the range between 10 17 and 10 18 cm −3 , as confirmed by secondary ion mass spectroscopy (SIMS). We show that a reduction of the background silicon concentration by one order of magnitude compared to the background level in undoped samples can be achieved by incorporation of oxygen during the growth. A strong band gap narrowing (BGN) of ∼6 meV was observed with increasing doping in the studied samples. The low temperature PL recombination time for donor-bound excitons (DBEs) was found to depend significantly on donor concentration. A model assuming generation of DBEs by capturing of free excitons by neutral donors explains the experimental results at low temperature. From fitting the experimental DBE lifetime to the model, the donor concentration dependence for O and Si donors could be reproduced. An effective exciton capture cross-section was found to be ∼9.4 × 10 −15 and 1.2 × 10 −14 cm 2 for silicon and oxygen donors, respectively.

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Section: Modeling Of the Dbe Pl Transient Resultsmentioning

confidence: 99%

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

et al. 2011

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“…I). 65,66 As E act of the deeper ABX1-3 transitions continuously scales with the corresponding E loc we can, as a first approach, exclude defect bound excitons such as Y-lines as their origin which are commonly observed in the same energetic regime. 32 Wagner et al 31 have shown that deeply localized Y-lines in ZnO thermalize more rapidly than more shallowly localized D 0 X.…”

Section: Determination Of the Activation Energiesmentioning

confidence: 99%

“…a non-radiative capture process which is characterized by a faster time constant τ cap . 66,77 The fast decay times τ D1,A1 which represent the decay shortly after the excitation can therefore be described by a combination of the actual excitonic recombination τ rec and the time constant τ cap accounting for the dynamics of the capturing process as denoted in Eq. (3).…”

Section: Dynamics Of the Bound Excitonsmentioning

confidence: 99%

Optical signature of Mg-doped GaN: Transfer processes

et al. 2012

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Mg doping of high quality, metal organic chemical vapor deposition grown GaN films results in distinct traces in their photoluminescence and photoluminescence excitation spectra. We analyze GaN:Mg grown on sapphire substrates and identify two Mg related acceptor states, one additional acceptor state and three donor states which are involved in the donor acceptor pair band transitions situated at 3.26 eV -3.29 eV in GaN:Mg. The presented determination of the donor acceptor pair band excitation channels by photoluminescence excitation spectroscopy in conjunction with temperature dependent photoluminescence measurements results in a direct determination of the donor and acceptor binding, localization, and activation energies which is put into a broader context based on Haynes's rule. Furthermore, we analyze the biexponential decay dynamics of the photoluminescence signal of the acceptor and donor bound excitons. As all observed lifetimes scale with the localization energy of the donor and acceptor related bound excitons, defect and complex bound excitons can be excluded as their origin. Detailed analysis of the exciton transfer processes in the close energetic vicinity of the GaN bandedge reveals excitation via free and bound excitonic channels but also via an excited state as resolved for the deepest localized Mg related acceptor bound exciton. For the two Mg acceptor states we determine binding energies of 164±5 meV and 195±5 meV which is in good agreement with recent density functional theory results. This observation confirms and quantifies the general dual nature of acceptor states in GaN based on the presented analysis of the photoluminescence and photoluminescence excitation spectra.

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“…Our study aims at the investigation of the undisturbed time evolution of a free exciton population. Even in lightly doped samples, repopulation processes among defect-induced carrier reservoirs crucially influence the dynamics of the exciton ensemble [21,22]. To avoid such spurious influences on the free exciton TRPL traces, we investigate a piece of nearly defect-free GaAs.…”

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confidence: 99%

Thermodynamic origin of the slow free exciton photoluminescence rise in GaAs

et al. 2016

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We use time-resolved photoluminescence (TRPL) spectroscopy to unequivocally clarify the microscopic origin of the nanosecond free exciton photoluminescence rise in GaAs at low temperatures. In crucial distinction from previous work, we examine the TRPL of the GaAs free exciton second LO-phonon replica. This enables us to simultaneously monitor the unambiguous time evolution of the total exciton population and the cooling dynamics of the initially hot free exciton ensemble. We demonstrate by a model based on the Saha equation and the experimentally determined cooling behavior that the long-debated slow photoluminescence rise is caused by time-dependent shifts in the thermodynamic quasiequilibrium between free excitons and the uncorrelated electron-hole plasma.

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Temperature dependence of the radiative lifetime in GaN

Cited by 94 publications

References 11 publications

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

Optical signature of Mg-doped GaN: Transfer processes

Thermodynamic origin of the slow free exciton photoluminescence rise in GaAs

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