Temperature dependence of the phase-coherence length in InN nanowires

“…2, [20][21][22] However, in the past we have found out that our InAs nanowires deposited using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) do not exhibit the expected quasi-metallic behavior. In contrast, they show semiconductor behavior, i.e., an increase of the resistance with decreasing temperature, and are quite resistive at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Effect of Si-doping on InAs nanowire transport and morphology

Wirths¹,

Weis²,

Winden³

et al. 2011

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N 2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature.

show abstract

“…[4][5][6][7][8][9] By choosing a narrow-band-gap semiconductor for the nanowire, i.e., InAs or InN, the common problem connected with carrier depletion at the surface can be avoided. 1, [10][11][12][13] As illustrated in Fig. 1͑a͒, for these semiconductors a surface accumulation due to the Fermi-level pinning in the conduction band occurs.…”

Section: Introductionmentioning

confidence: 99%

“…If the length of the nanowire is comparable to l one finds conductance fluctuates with an amplitude on the order of e 2 / h if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. 12,28,29 The fluctuations originate from the fact that in small disordered samples, electron interference effects are not averaged out. 30,31 Although fluctuations in the conductance can mask other quantum effects, i.e., weak localization or quantized conductance, important information on the electron transport can be gained from the statistical properties of the fluctuations themselves.…”

Section: Introductionmentioning

confidence: 99%

Spin-orbit coupling and phase coherence in InAs nanowires

et al. 2010

Self Cite

View full text Add to dashboard Cite

We investigated the magnetotransport of InAs nanowires grown by selective-area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conductance upon variation in the magnetic field or the backgate voltage are observed, which are attributed to electron interference effects in small disordered conductors. From the correlation field of the magnetoconductance fluctuations the phase-coherence length l is determined. At the lowest temperatures l is found to be at least 300 nm while for temperatures exceeding 2 K a monotonous decrease in l with temperature is observed. A direct observation of the weak antilocalization effect indicating the presence of spin-orbit coupling is masked by the strong magnetoconductance fluctuations. However, by averaging the magnetoconductance over a range of gate voltages a clear peak in the magnetoconductance due to the weak antilocalization effect was resolved. By comparison of the experimental data to simulations based on a recursive two-dimensional Green's-function approach a spin-orbit scattering length of approximately 70 nm was extracted, indicating the presence of strong spin-orbit coupling.

show abstract

Temperature dependence of the phase-coherence length in InN nanowires

Cited by 29 publications

References 24 publications

Weak localization and size effects in thin In 2 O 3 films prepared by autowave oxidation

Weak localization and size effects in thin In 2 O 3 films prepared by autowave oxidation

Effect of Si-doping on InAs nanowire transport and morphology

Spin-orbit coupling and phase coherence in InAs nanowires

Contact Info

Product

Resources

About