Temperature dependence of the growth of super-grain polycrystalline silicon by metal induced crystallization

Choi, Jong Hyun; Kim, Do Young; Park, Seong Jin; Choo, Byoung Kwon; Jang, Jin

doi:10.1016/s0040-6090(02)01150-1

Cited by 17 publications

(7 citation statements)

References 12 publications

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“…If Ni is not supplied from the outside of the disk, the grain size can not grow up to 100 m because of the shortage of nickel source for inducing crystallization. 15 These results indicate that all precipitates did not act as nucleation sites for inducing crystallization. Therefore, some precipitates form nuclei for inducing crystallization, but the others, particularly small ones, can be residual nickel.…”

Section: Electrochemical and Solid-state Letters 7 ͑11͒ H52-h54 ͑2004͒mentioning

confidence: 92%

Anomalous Increase of Grain Size in Ni-Mediated Crystallization of Amorphous Silicon

Choi

Kim

et al. 2004

Electrochem. Solid-State Lett.

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We studied the grain growth in Ni-mediated crystallization of amorphous silicon ͑a-Si͒ films with various thicknesses. The Ni particles with density of 3.39 ϫ 10 13 cm Ϫ2 was deposited on a-Si and this was annealed at 580°C for 15 min. The grain size of the crystallized poly-Si increases from 25 to 104 m as the thickness of a-Si increases from 20 to 300 nm. The grain size has a linear relationship with the a-Si thickness. This can be understood on the basis of the cylindrical seed formation and subsequent cylindrical, lateral grain growth. A cylindrical grain was found in atomic force microscope image of a partially crystallized a-Si after the Secco etch of surrounding a-Si phase.Polycrystalline silicon thin-film transistors ͑poly-Si TFTs͒ fabricated on glass are of increasing interest for use in active-matrix liquid crystal display ͑AMLCD͒ and active-matrix organic light emitting diode ͑AMOLED͒. Recently, reducing the process time and lowering the process temperature for the poly-Si TFTs have become the main issues to increasing the throughput of TFT array production and also for use of glass substrate. Among many crystallization methods exist for low-temperature poly-Si, Ni silicide-mediated crystallization ͑SMC͒ has become of increasing interest because it does not use the laser and the TFT performance with the SMC poly-Si is almost the same as that of a good poly-Si by excimer laser annealing. 1 Therefore, low-cost production of low-temperature poly-Si TFT is possible using SMC.When an ultrathin metal is deposited onto amorphous silicon ͑a-Si͒, the a-Si crystallizes at a lower temperature than its solid phase crystallization ͑SPC͒ temperature. Among many metals used for crystallization, Ni is used mainly because the resulting poly-Si has a good material property. 2-4 The precipitates of Ni disilicide, formed at Ͻ400°C, act as seeds for crystallization, which then leads to lowering crystallization temperature. 5 Hayzelden et al. demonstrated the grain growth from the isolated nickel disilicide precipitates in Ni-implanted a-Si. 6 The performance of a TFT can be improved by reducing the a-Si thickness in metal induced lateral crystallization ͑MILC͒. 7,8 However, the grain size is independent of the film thickness for the MILC poly-Si. 9 Note that the poly-Si thickness for TFTs is ϳ50 nm, which is widely used also in excimer laser crystallization of a-Si. There is no literature indicating the relationship between the a-Si thickness and grain size for SMC and MILC, but the performance of TFT made by MILC poly-Si depends on a-Si thickness. 7,8,10

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Section: Electrochemical and Solid-state Letters 7 ͑11͒ H52-h54 ͑2004͒mentioning

confidence: 92%

Anomalous Increase of Grain Size in Ni-Mediated Crystallization of Amorphous Silicon

Choi

Kim

et al. 2004

Electrochem. Solid-State Lett.

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“…[6][7][8] We have optimized the crystallization conditions to obtain high-quality poly-Si for high-performance device, many factors such as Ni area density and annealing temperature. 9,10) For MICC, the Ni density of 8 Â 10 13 atoms/cm 2 was deposited on the SiN x by RF sputtering at 0.2 Torr with a power density of 0.27 W/cm 2 . The crystallinity of the poly-Si depends strongly on the Ni density and thus 8 Â 10 13 atoms/cm 2 was used to obtain a large-grain poly-Si.…”

Section: Methodsmentioning

confidence: 99%

Flexibility of Low Temperature Polycrystalline Silicon Thin-Film Transistor on Tungsten Foil

Lee¹,

Lim²,

Jang³

2011

Jpn. J. Appl. Phys.

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We have studied the mechanical bending effect of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on flexible tungsten foil. The p-channel TFTs on tungsten foil, using the poly-Si obtained by metal induced crystallization, exhibited a field-effect mobility of 88.8 cm2 V-1 s-1, threshold voltage of -4.8 V, subthreshold swing of 0.64 V/decade, and a minimum off current of <10-12 A/µm. The tungsten foil was chosen because its thermal expansion coefficient is similar to that of the Si thin film. The TFTs on flexible tungsten foil is extremely stable until the bending radius of 5 mm, which corresponds to the strain of 0.58%. Additionally, the devices can be repetitively flexed with a strain of 0.58% for 5,000 times of bending.

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“…In order to get large grain poly-Si for high-performance device, many experimental parameters such as crystallization temperature [7] and Ni area density [8] have been varied, but there is little work on controlling the orientation of the poly-Si by Nimediated crystallization of a-Si. It is known that {001} orientation to the surface normal exhibits the lower defect density at the SiO 2 /Si interface compared to the {111} SiO 2 /Si interface, resulting in higher field-effect mobility for (001)-textured films [9,10].…”

Section: Introductionmentioning

confidence: 99%

Formation of (001)-textured grain in (111) polycrystalline silicon film

Kim

Kang

et al. 2007

Thin Solid Films

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Temperature dependence of the growth of super-grain polycrystalline silicon by metal induced crystallization

Cited by 17 publications

References 12 publications

Anomalous Increase of Grain Size in Ni-Mediated Crystallization of Amorphous Silicon

Anomalous Increase of Grain Size in Ni-Mediated Crystallization of Amorphous Silicon

Flexibility of Low Temperature Polycrystalline Silicon Thin-Film Transistor on Tungsten Foil

Formation of (001)-textured grain in (111) polycrystalline silicon film

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