1998
DOI: 10.1063/1.367103
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Temperature dependence of the fundamental absorption edge in CuIn3Se5

Abstract: From the study of the temperature dependence of the optical absorption spectra, the energy gap EG of CuIn3Se5 between 10 and 300 K are calculated using the model proposed by Elliot. This variation is compared to the semiempirical relation suggested by Manoogian–Woolley. The Debye temperature ΘD, the dielectric constant ε0, and the effective masses of free excitons mex, electrons me, and holes mh are estimated from the analysis of the adjustable parameters of these models.

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Cited by 39 publications
(21 citation statements)
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“…0, using g = 2, which is the value for the degeneracy factor of the defect ground state when the bottom of the conduction band and the top of the valence band are non-degenerate [24], m * e and m * h are found to be (0.13 AE 0.01) and (1.06 AE 0.07) m e , respectively. These values are in good agreement with m * e % 0.16m e and m * h % 1.1m e estimated for CuIn 3 Se 5 from optical data [27]. For comparison, it is worth mentioning that the electron effective mass in CuInSe 2 obtained from Shubnikov-de Hass oscillations in the magnetoresistance is m * e = 0.085m e [28] whereas m * h % 0.78 m e for the hole is estimated from both electrical and optical data [29].…”
Section: Electrical Resistivity and Carrier Concentrationsupporting
confidence: 77%
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“…0, using g = 2, which is the value for the degeneracy factor of the defect ground state when the bottom of the conduction band and the top of the valence band are non-degenerate [24], m * e and m * h are found to be (0.13 AE 0.01) and (1.06 AE 0.07) m e , respectively. These values are in good agreement with m * e % 0.16m e and m * h % 1.1m e estimated for CuIn 3 Se 5 from optical data [27]. For comparison, it is worth mentioning that the electron effective mass in CuInSe 2 obtained from Shubnikov-de Hass oscillations in the magnetoresistance is m * e = 0.085m e [28] whereas m * h % 0.78 m e for the hole is estimated from both electrical and optical data [29].…”
Section: Electrical Resistivity and Carrier Concentrationsupporting
confidence: 77%
“…Others, like the ionized impurity concentration N I = N D + N A , m * e , m * p , E D , and E A were those obtained from the analysis of the carrier concentration data. The longitudinal sound velocity u % 2 Â 10 5 cm/s, was estimated from the Debye temperature q D % 260 K [27] and e 0 /e a was taken as 1.7, which is the average obtained for Cu-ternaries [20]. An excellent fit above 110 K, as shown in Fig.…”
Section: Carrier Mobilitymentioning
confidence: 99%
“…The shapes of the last two optical functions of ͑4CuInSe 2 ͒ y ͑CuIn 5 Se 8 ͒ 1−y ͑9.1 and 3.4 at. % Cu͒ are very different from the first four, which indicates that they have the possibility to have totally different phases than the others, 50,52,53 as supported by XRD analysis ͑see Sec. V A͒.…”
Section: Resultsmentioning
confidence: 83%
“…Several groups have investigated single crystal and bulk properties of CuIn 3 Se 5 and Cu(In 1 À x Ga x ) 3 Se 5 [7][8][9][10][11][12]. Investigations on epitaxial layers and polycrystalline thin films of CuIn 3 Se 5 [13 -16] have also been reported.…”
Section: Introductionmentioning
confidence: 99%