Temperature dependence of the energy gap of InSb using nonlinear optical techniques

Littler, C. L.; Seiler, David G.

doi:10.1063/1.95789

Cited by 73 publications

(29 citation statements)

References 9 publications

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“…Published values of the fundamental energy gap, E g [14], are consistent with our results and, when substituted in ( 5 ) , give an acceptable fit to our experimental data. This analysis is appropriate to the spectral region for discrete acceptor transitions but, as can be seen from our results, the optical absorption extends below the lowest transition energy theoretically predicted by this treatment.…”

Section: (4)supporting

confidence: 89%

The Identification of Urbach, Acceptor Impurity, and Phonon‐Assisted Components of the Optical Absorption Band Tail of n‐Type InSb

Allan¹,

MacKenzie²,

Hunter³

et al. 1988

Physica Status Solidi (b)

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New measurements are presented of the interband absorption edge, in the range 0.01 to 100 cm-', for uncompensated n-type InSb obtained using a photo-Hall technique. A spectral Urbach edge is observed in the range of sample temperature (20 t o 77 K) and it is shown that the form of the experimental results derives from a broadening due to the interaction of acceptor impurity states.A phonon-assisted component is also identified at sample temperatures above 40 K.Es wird resonante Interband-Absorption an undoticrtem n-InSb im Bcreich 0,Ol bis 100 cm-* mit Hilfe einer Photo-Hall-Methodo gemessen. Im untersuchten Temperaturbercich (20 bis 70 K) wird cine Urbach-Kante beobachtet. Die experimentellen Ergebnisae zeigen eine Verbreiterung aufgrund der Wechselwirkung zwiechen Verunreinigungen mit Akxeptorcharaktcr. Bei Probentemperaturen oberhalb 40 K kann eine durch Phononen unterstiitztc Komponente identifiziert werden. IntrodactionOptical absorption in indium antimonide has been the subject of research interest for some thirty years. Early work [l to 31 established that InSb is a direct gap semiconductor with near-parabolic bands [a]. Tho associated resonant optical absorption spectrum has the form of a temperature-dependent band-edge covering some five orders of magnitude from a low absorption band tail region.The observation of nonlinear optical effects in InSb [5j renewed interest in the spectral details of the optical absorption band tail and the large dispersive nonlinearity in InSb has been attributed [ti] t o a change in the optical absorption due to a dynamic Burstein-Moss shift [?I of the band edge caused by the photogenerated carrier population. Rccent work [8] has indicated that there are discrepancies in the previously published values [9] for optical absorption in the band-tail region. In this paper we present new, self-consistent data for n-type InSb with a theoretical modelling which gives excellent agreement with the high resolution measurement of the absorption band tail.The interband optical absorption process is fundamental to the photogeneration of a dynamic free carrier population in InSb. The experimental procedure t o determine the intorband absorption coefficient in the present work is based on monitoring the photogenerated carrier population by selectively recording the photo-Hall voltage [8] for a range of laser frequencies a t a fixed sample temperature. This technique is significantly more accurate and sensitive than direct optical absorption measurements a t low absorptions and interband absorption coefficients as low as 0.01 cm-' may -~~ l ) Riccarton, Edinburgh EH14 4AS, Great Britain.

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Section: (4)supporting

confidence: 89%

The Identification of Urbach, Acceptor Impurity, and Phonon‐Assisted Components of the Optical Absorption Band Tail of n‐Type InSb

Allan¹,

MacKenzie²,

Hunter³

et al. 1988

Physica Status Solidi (b)

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“…The elucidation of carrier dynamics in InSb on the ultrashort timescale is hence of great fundamental and technological relevance. The material is a direct semiconductor with a bandgap of 170 meV at room temperature [16], making it well-suited for applications in infrared sensors covering the wavelength range from 1 µm to 5 µm [17].…”

Section: Thz-induced Impact Ionization In Insbmentioning

confidence: 99%

THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]

et al. 2009

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Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm 2 shows strong free carrier absorption saturation at temperatures of 300 K and 200 K respectively. If the energy imparted to the carriers exceeds the bandgap, impact ionization processes can occur. The dynamics of carrier cooling in GaAs and impact ionization in InSb were monitored using THz-pump/THz probe spectroscopy which provides both sub-bandgap excitation and probing, eliminating any direct optical electron-hole generation that complicates the evaluation of results in optical pump/THz probe experiments.

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“…Sb s-orbitals were set to -3.5, 4, and -9, respectively, in order to yield the correct band ordering as reported in previous experimental [33,34] and theoretical studies [35].…”

mentioning

confidence: 99%

Gapped electronic structure of epitaxial stanene on InSb(111)

Chan

Chen

et al. 2018

Phys. Rev. B

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Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications.Here, we report a study of stanene epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb( 111) is a strong contender for electronic QSH applications.

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Temperature dependence of the energy gap of InSb using nonlinear optical techniques

Cited by 73 publications

References 9 publications

The Identification of Urbach, Acceptor Impurity, and Phonon‐Assisted Components of the Optical Absorption Band Tail of n‐Type InSb

The Identification of Urbach, Acceptor Impurity, and Phonon‐Assisted Components of the Optical Absorption Band Tail of n‐Type InSb

THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]

Gapped electronic structure of epitaxial stanene on InSb(111)

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