Temperature dependence of the electromechanical characteristics of superconducting RF-MEMS switches

Alcheikh, Nouha; Xavier, P.; Duchamp, Jean‐Marc; Schuster, K.; Malhaire, C.; Remaki, B.; Boucher, C.; Mescot, Xavier

doi:10.1007/s00542-014-2083-1

Cited by 4 publications

(1 citation statement)

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“…In addition, Nb has been widely employed in microelectronics and optoelectronics owing to excellent electronic, thermal, and mechanical qualities. Thin films of Nb have become very appealing to the scientific community as a result of their numerous technological use such as nano-SQUIDs [ 12 , 13 , 14 ] circuits for switches operating at high frequency in cryogenic conditions [ 15 ], superconductivity [ 16 , 17 ], single photon detectors [ 18 ], and high temperature plasmonic applications [ 19 , 20 , 21 ]. Furthermore, recently, Nb based structural alloys have the focus of intense research in view of the possibility to design unique high-entropy alloys for application in energy and aerospace applications.…”

Section: Introductionmentioning

confidence: 99%

Correlation between Crystal Structure, Surface/Interface Microstructure, and Electrical Properties of Nanocrystalline Niobium Thin Films

et al. 2020

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Niobium (Nb) thin films, which are potentially useful for integration into electronics and optoelectronics, were made by radio-frequency magnetron sputtering by varying the substrate temperature. The deposition temperature (Ts) effect was systematically studied using a wide range, 25–700 °C, using Si(100) substrates for Nb deposition. The direct correlation between deposition temperature (Ts) and electrical properties, surface/interface microstructure, crystal structure, and morphology of Nb films is reported. The Nb films deposited at higher temperature exhibit a higher degree of crystallinity and electrical conductivity. The Nb films’ crystallite size varied from 5 to 9 (±1) nm and tensile strain occurs in Nb films as Ts increases. The surface/interface morphology of the deposited Nb films indicate the grain growth and dense, vertical columnar structure at elevated Ts. The surface roughness derived from measurements taken using atomic force microscopy reveal that all the Nb films are characteristically smooth with an average roughness <2 nm. The lowest electrical resistivity obtained was 48 µΩ cm. The correlations found here between growth conditions electrical properties as well as crystal structure, surface/interface morphology, and microstructure, could provide useful information for optimum conditions to produce Nb thin films for utilization in electronics and optoelectronics.

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