The role of the substrate temperature on superconducting properties of sputtered Nb films

Freitas, Thiago Corrêa de; González, Jeanette; Nascimento, V.P.; Passamani, E. C.

doi:10.1016/j.tsf.2016.05.012

Cited by 16 publications

(1 citation statement)

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“…The impact of working pressure on the material properties of Nb thin films was evident. De Freitas et al [ 26 ] observed that the superconducting properties degraded with Ts > 373 K. The interdiffusion at the Si/Nb interface was attributed as the main cause of the degradation and quality. Influence of baking and sputtering process on the residual gas composition in the vacuum chamber on the stress, electrical properties, and morphology of Nb thin films was examined by Wang et al [ 27 ].…”

Section: Introductionmentioning

confidence: 99%

Correlation between Crystal Structure, Surface/Interface Microstructure, and Electrical Properties of Nanocrystalline Niobium Thin Films

et al. 2020

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Niobium (Nb) thin films, which are potentially useful for integration into electronics and optoelectronics, were made by radio-frequency magnetron sputtering by varying the substrate temperature. The deposition temperature (Ts) effect was systematically studied using a wide range, 25–700 °C, using Si(100) substrates for Nb deposition. The direct correlation between deposition temperature (Ts) and electrical properties, surface/interface microstructure, crystal structure, and morphology of Nb films is reported. The Nb films deposited at higher temperature exhibit a higher degree of crystallinity and electrical conductivity. The Nb films’ crystallite size varied from 5 to 9 (±1) nm and tensile strain occurs in Nb films as Ts increases. The surface/interface morphology of the deposited Nb films indicate the grain growth and dense, vertical columnar structure at elevated Ts. The surface roughness derived from measurements taken using atomic force microscopy reveal that all the Nb films are characteristically smooth with an average roughness <2 nm. The lowest electrical resistivity obtained was 48 µΩ cm. The correlations found here between growth conditions electrical properties as well as crystal structure, surface/interface morphology, and microstructure, could provide useful information for optimum conditions to produce Nb thin films for utilization in electronics and optoelectronics.

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Section: Introductionmentioning

confidence: 99%