Temperature dependence of the electrical resistivity of LaxLu1-xAs

Abstract

We investigate the temperature-dependent resistivity of single-crystalline films of LaxLu1-xAs over the 5–300 K range. The resistivity was separated into lattice, carrier and impurity scattering regions. The effect of impurity scattering is significant below 20 K, while carrier scattering dominates at 20–80 K and lattice scattering dominates above 80 K. All scattering regions show strong dependence on the La content of the films. While the resistivity of 600 nm LuAs films agree well with the reported bulk resistivity values, 3 nm films possessed significantly higher resistivity, suggesting that interfacial roughness significantly impacts the scattering of carriers at the nanoscale limit

Rare-Earth Monopnictide Alloys for Tunable, Epitaxial, Designer Plasmonics

“…Temperature-dependent resistivity measurements (Figure , inset) were conducted using etched mesa VdP structures. Details of sample processing appear elsewhere . La x Lu 1– x As films of ∼48% La content and 30, 100, and 500 nm thickness exhibit a reduction in resistivity of ∼2× over a temperature range of 77–300 K. The behavior of these RE-As alloy films follows that of previous works in ErAs, LuAs, and LaAs, decreasing in resistivity with decreasing temperature.…”

“…La x Lu 1– x As films of ∼48% La content and 30, 100, and 500 nm thickness exhibit a reduction in resistivity of ∼2× over a temperature range of 77–300 K. The behavior of these RE-As alloy films follows that of previous works in ErAs, LuAs, and LaAs, decreasing in resistivity with decreasing temperature. Further investigations into the temperature-dependence of various RE-V binary and ternary alloy films at 4 K are underway, and may give more insight into the carrier scattering behavior of the La x Lu 1– x As alloys …”