Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors

Bomberger, Cory C.; Lewis, Matthew R.; Vanderhoef, Laura; Doty, Matthew F.; Zide, Joshua M. O.

doi:10.1116/1.4979347

Cited by 23 publications

(12 citation statements)

References 140 publications

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“…However, our analysis of QI and EEI effects establishes the inadequacy of transport measurements alone in understanding either the predicted semimetallic to semiconducting phase transition or the evolution of the electronic structure with film thickness. Our work provides a comprehensive understanding of the electronic structure in ultrathin semimetallic systems that will be important in possible device applications ( 39 ) and in the realization of novel physical properties that are proposed to emerge in the ultrathin limit ( 2 , 4 , 40 , 41 ). Our work also sets the stage for further control over their electronic properties by applications of biaxial stress and proximity effect in artificial heterostructures.…”

Section: Resultsmentioning

confidence: 99%

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

et al. 2021

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Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.

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Section: Resultsmentioning

confidence: 99%

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

et al. 2021

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“…To calculate ZT of TbAs:InGaAs, we measured the thermal conductivity of three samples, 0.31%, 0.78%, and 1.55%, to represent low, medium, and high concentrations of TbAs:InGaAs, as seen in Figure a. As discussed earlier, it is known that adding Ln‐V nanoparticles, such as TbAs, into InGaAs reduces the thermal conductivity in the matrix, as the nanoparticles act as phonon scattering sites . Phonon–phonon and phonon–electron scatterings increase with temperature and result in decreased thermal conductivity.…”

Section: Resultsmentioning

confidence: 99%

High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material

Tew

Vempati

Clinger

et al. 2019

Adv Elect Materials

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of energy are either scarce or simply unavailable. The efficiency of a thermoelectric device is essential in determining its practicality and can be assessed using the dimensionless figure of merit ZT 2 S T σ κ = , where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, and T is the absolute temperature. Power factor, PF, another commonly used metric for thermoelectric material, is defined by PF = S 2 σ. ZT could be improved by either independently increasing the power factor or reducing the thermal conductivity. However in reality improving the ZT of a material is difficult due to the dependency of various material properties. In most conductive materials, the ratio of thermal conductivity to the electrical conductivity is constant (Wiedemann-Franz law), preventing improvements on ZT by changing either of them. Similarly, increasing the electrical conductivity of a material by means of increasing either carrier concentration or mobility would reduce its Seebeck coefficient, preventing any improvement in PF or ZT.Introducing nanoparticles into a semiconductor matrix can improve ZT by reducing the lattice contribution to thermal Lanthanide monopnictide (Ln-V) nanoparticles embedded within III-V semiconductors, specifically in In 0.53 Ga 0.47 As, are interesting for thermoelectric applications. The electrical conductivity, Seebeck coefficient, and power factor of co-deposited TbAs:InGaAs over the temperature range of 300-700 K are reported. Using Boltzmann transport theory, it is shown that TbAs nanoparticles in InGaAs matrix give rise to an improved Seebeck coefficient due to an increase in scattering, such as ionized impurity scattering. TbAs nanoparticles act as electron donors in the InGaAs matrix while having minimal effects on electron mobility, and maintain high electrical conductivity. There is further evidence that TbAs nanoparticles act as energy dependent electron scattering sites, contributing to an increased Seebeck coefficient at high temperature. These results show that TbAs:InGaAs nanocomposite thinfilms containing low concentrations, specifically 0.78% TbAs:InGaAs, display high electrical conductivity, reduced thermal conductivity, improved Seebeck coefficient, and demonstrated ZT of power factors as high as 7.1 × 10 −3 W K −2 m −1 and ZT as high as 1.6 at 650 K.

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“…There has been substantial progress in the development of new III-V materials such as GaBi x As 1−x , which reduces the bandgap, and ErAs:GaAs or TbAs:GaAs, in which the rare-earth (e.g. ErAs) forms nanoinclusions that mediate extremely fast carrier relaxation [23][24][25][26][27][28][29][30][31][32][33][34] . These materials offer significant opportunities for increased control over band structure and carrier dynamics within the PCA substrate.…”

Section: Photoconducting Antennasmentioning

confidence: 99%

Principles of spintronic THz emitters

Wu,

Ameyaw,

Doty

et al. 2021

Preprint

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Significant progress has been made in answering fundamental questions about how and, more importantly, on what time scales interactions between electrons, spins, and phonons occur in solid state materials. These complex interactions are leading to the first real applications of terahertz (THz) spintronics: THz emitters that can compete with traditional THz sources and provide additional functionalities enabled by the spin degree of freedom. This tutorial article is intended to provide the background necessary to understand, use, and improve THz spintronic emitters. A particular focus is the introduction of the physical effects that underlie the operation of spintronic THz emitters. These effects were, for the most part, first discovered through traditional spin-transport and spintronic studies. We therefore begin with a review of the historical background and current theoretical understanding of ultrafast spin physics that has been developed over the past twenty-five years. We then discuss standard experimental techniques for the characterization of spintronic THz emitters and -more broadly -ultrafast magnetic phenomena. We next present the principles and methods of the synthesis and fabrication of various types of spintronic THz emitters. Finally, we review recent developments in this exciting field including the integration of novel material platforms such as topological insulators as well as antiferromagnets and materials with unconventional spin textures.

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Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors

Cited by 23 publications

References 140 publications

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material

Principles of spintronic THz emitters

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