Abstract:The activation of bipolar conduction was investigated for two 4H-SiC 10 kV JBS-diodes which differ in the area ratio between p-doped and n-doped regions (Ws/WPin). Quasi-static measurements at low electric current densities (j < 2.5 Acm-2) were performed in a temperature range between 25°C and 500°C. The lower ratio (Ws/WPin) leads to a higher threshold voltage. On the other hand lower electric power density is neccessary to trigger temperature enhanced bipolar activation. Moreover, the lower ratio improves… Show more
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