Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Wei, Wenwang; Peng, Yi; Wang, Jia-Bin; Saleem, Muhammad Farooq; Wang, Wen; Li, Lei; Sun, Wenhong

doi:10.3390/nano11030698

Cited by 13 publications

(5 citation statements)

References 62 publications

(60 reference statements)

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“…In recent years, breakthroughs have been made in film synthesis technology. Many physical and chemical methods have been used to synthesize films, such as atomic layer deposition (ALD) [23], sol-gel method [24], and metalorganic chemical vapor deposition (MOCVD) [25]. Among them, the sol-gel method has been widely used due to its advantageous large-area uniformity, simple equipment, and relatively low processing temperature.…”

Section: Introductionmentioning

confidence: 99%

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

et al. 2021

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Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102 at 0.1 and −0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2, and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.

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Section: Introductionmentioning

confidence: 99%

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

et al. 2021

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“…The cross-sectional HRTEM image of the AlN film sample and the corresponding SAED pattern of the AlN layer are shown in Figure 2 c. The SAED pattern is a spot pattern, which reveals that the AlN film is a single crystal in nature with a wurtzite hexagonal phase [ 27 ]. According to the HRTEM, the d-spacing is measured to be 0.496 nm in the AlN layer and 0.430 nm in the sapphire substrate, which matches the typical d-spacing values of AlN (001) and sapphire (003), respectively [ 28 , 29 ]. This means the (001) planes of the hexagonal AlN phase are parallel to the substrate and thus to the film surface.…”

Section: Resultsmentioning

confidence: 61%

Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam

Han

Wei

et al. 2023

Nanomaterials

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With the progress of wide bandgap semiconductors, compact solid-state light-emitting devices for the ultraviolet wavelength region are of considerable technological interest as alternatives to conventional ultraviolet lamps in recent years. Here, the potential of aluminum nitride (AlN) as an ultraviolet luminescent material was studied. An ultraviolet light-emitting device, equipped with a carbon nanotube (CNT) array as the field-emission excitation source and AlN thin film as cathodoluminescent material, was fabricated. In operation, square high-voltage pulses with a 100 Hz repetition frequency and a 10% duty ratio were applied to the anode. The output spectra reveal a dominant ultraviolet emission at 330 nm with a short-wavelength shoulder at 285 nm, which increases with the anode driving voltage. This work has explored the potential of AlN thin film as a cathodoluminescent material and provides a platform for investigating other ultrawide bandgap (UWBG) semiconductors. Furthermore, while using AlN thin film and a carbon nanotube array as electrodes, this ultraviolet cathodoluminescent device can be more compact and versatile than conventional lamps. It is anticipated to be useful in a variety of applications such as photochemistry, biotechnology and optoelectronics devices.

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“…In the past two decades, researchers have made a great deal of efforts to improve the EQE and WPE of AlGaN‐based UV LEDs, which have made great progress. [ 5–7,11,17–19,30,33–91 ] Figures and show the EQE and WPE for UV LEDs of different emission wavelengths by various research groups (till dated 2021/8/30) respectively. As shown in Figure 2, we can see that the EQE gradually decreased while the emission wavelength reduced from 400 to 200 nm.…”

Section: Overview Of Algan‐based Uv Ledsmentioning

confidence: 99%

“…External quantum efficiency (EQE) of different peak wavelengths by various research groups. [ 5–7,11,17–19,30,33–91 ] The corresponding full name of mentioned abbreviations are listed as following: Chinese Academy of Sciences (CAS), Ferdinand‐Braun‐Institut, Berlin (FBH‐Berlin), Hebei University of Technology (HEBUT), Huazhong University of Science and Technology (HUST), Fraunhofer Institute for Applied Solid State Physics (IAF), National Chiao Tung University (NCTU), Nippon Telegraph and Telephone Corporation (NTT), National Institute of Information and Communications Technology (NICT), Ohio State University (OSU), Palo Alto Research Center (PARC), Sensor Electronic Technology, Inc (SETi), Technische Universität Berlin (TU Berlin), University of Wisconsin–Madison (UM‐Madison), University of South Carolina (USC), University of Science and Technology of China (USTC).…”

Section: Overview Of Algan‐based Uv Ledsmentioning

confidence: 99%

Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes

Liang

Sun

2022

Adv Materials Technologies

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AlGaN‐based deep ultraviolet light‐emitting diodes (UV LEDs) have gained rapidly growing attention due to their wide applications in water purification, air disinfection, and sensing as well as optical communication. Moreover, deep UV radiation has been verified as one of effective way to inactivate COVID‐19. However, although numerous efforts have been made in deep UV LED chips, the reported highest external quantum efficiency (EQE) of them is 20.3%, which is far lower than that of visible LEDs. The EQE of commercial packaged AlGaN‐based deep UV LEDs is usually lower than 5%, which will cause serious reliability problems as well. Therefore, it is very urgent to improve EQE and reliability of the devices from packaging level. In this review, a systematical summarization about the packaging technologies of AlGaN‐based deep UV LEDs has been analyzed and future prospects have been made as well. Firstly, this work provides a brief overview of the devices and analyzes why the packaging level reduces EQE and reliability in theory. Then, systematically reviews the recent advances in packaging technologies and deep UV micro‐LEDs. Finally, conclusions and outlooks are given as well. This review is of great significance for promoting the development of the packaging technologies for AlGaN‐based deep UV LEDs.

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Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Cited by 13 publications

References 62 publications

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam

Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes

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