Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Abstract

Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102 at 0.1 and −0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2, and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.

Threshold Switching Memristor Based on the BaTiO3/Nb:SrTiO3 Epitaxial Heterojunction for Neuromorphic Computing

“…In the low-bias region (0∼0.5 V), the slope is fitted to 1.06, indicating a typical Ohmic conduction. As the voltage increases, the current increases rapidly, and the slope finally increases to 2.20, which infers the space charge limited conduction (SCLC). , This is consistent with the TS mechanism of oxygen vacancy CFs …”

“…24,32 This is consistent with the TS mechanism of oxygen vacancy CFs. 33 From the temperature-dependent TS shown in Figure 3a, it can be seen that the TS is stable from 225 to 300 K. The V th and V hold at different temperatures are shown in Figure 3b. With the increase in temperature, the absolute value of V th decreases drastically, while V hold almost unchanged.…”

Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

“…With the increase in the forward sweep voltage, an SET occurs at about 3.2 V, and the device current increases significantly. The device switches from the high-resistance state (HRS) to the low-resistance state (LRS) [34,35]. As the negative sweep voltage increases, and as the sweep voltage returns from −6 V to 0 V, the device switches from the LRS to the HRS.…”