Temperature dependence of sensing properties of hydrogen-sensitive extended-base heterojunction bipolar transistors

Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity

“…The heterojunction's broad process tolerance ensures stable performance across different fabrication conditions. Coupled with high yields and a manufacturing process, these attributes facilitate large-scale production and applications, positioning InGaP/GaAs heterojunctions as a formidable choice in advanced semiconductor technologies [16][17][18][19][20][21][22][23][24][25][26]. The integration of large-size epitaxial wafers into semiconductor manufacturing significantly enhances production efficiency and material usage, thereby reducing the cost per unit area.…”