Temperature dependence of photoluminescence of layer semiconductor p-GaTe

Shigetomi, S.; Ikari, Tetsuo; Nishimura, Hideki

doi:10.1016/s0022-2313(97)00305-0

Cited by 26 publications

(30 citation statements)

References 11 publications

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“…By comparing the results obtained in this work with those obtained in previous studies, 15,16,18 the existence of an acceptor level at 150 meV can be confirmed. This level agrees with that previously obtained by Hall effect measurements.…”

Section: Donor-acceptor Emissionsupporting

confidence: 83%

“…This level agrees with that previously obtained by Hall effect measurements. 17 The DAP recombination observed in our work at 1.57 eV is due to recombination to the acceptor level at 150 meV from a donor level, as initially mentioned by Shigetomi et al 16 However, our results do not confirm the mechanism proposed by Guder et al, 18 which stated that the DAP band is due to recombination from a donor level at 170 meV to an acceptor level at 56 meV. …”

Section: Donor-acceptor Emissioncontrasting

confidence: 73%

“…It seems that the 1.59 eV emission observed by Shigetomi et al 16 and the 1.575 eV emission obtained by Guder et al 18 are due to the same DAP recombination. However, the distribution of levels involved in the recombination differs between the two authors.…”

Section: Introductionmentioning

confidence: 52%

“…These two bands were attributed to the recombination of free excitons and excitons bound to a neutral acceptor, respectively. Shigetomi et al 16 working at 97 K obtained a PL spectrum with two emission bands at 1.76 and 1.59 eV. The 1.76 eV band was explained by emission due to free exciton recombination and the 1.59 eV band was assumed to be related to the transition from a donor level to an acceptor level located 150 meV above the valence band.…”

Section: Introductionmentioning

confidence: 99%

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Recombination processes in unintentionally doped GaTe single crystals

Zubiaga

Garcı́a

Plazaola

et al. 2002

Journal of Applied Physics

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Emission spectra of GaTe single crystals in the range of 1.90-1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14Ϯ1 meV. A value of 1.796Ϯ0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18Ϯ0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and defects was analyzed. The results obtained show the existence of two acceptor levels with ionization energies of 110Ϯ5 and 150Ϯ5 meV, respectively, and one donor level with an ionization energy of 75Ϯ5 meV. The study of chemical composition by inductively coupled plasma-optical emission spectroscopy and x-ray energy dispersion spectroscopy shows the existence of Na, Li, and Si. Sodium and lithium impurities could be associated with acceptor levels at gallium substitutional sites, and silicon ones with a donor level at Ga sites, whose vacancies can also be involved in these electronic levels.

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Section: Donor-acceptor Emissionsupporting

confidence: 83%

Section: Donor-acceptor Emissioncontrasting

confidence: 73%

Section: Introductionmentioning

confidence: 52%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Recombination processes in unintentionally doped GaTe single crystals

Zubiaga

Garcı́a

Plazaola

et al. 2002

Journal of Applied Physics

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“…It consists of successive Te-Ga-Ga-Te atomic planes joined together with Ga-Ga bonds lying approximately at right angles to the other Ga-Ga bonds [19]. It has covalent bonds inside the layers and an easy cleavage plane due to van der Waals type bonding between the layers [20] which result in an extremely smooth surface [21].…”

Section: Introductionmentioning

confidence: 99%

Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot

Gülnahar

Efeoǧlu

2009

Solid-State Electronics

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Wavelength‐Dependent Anisotropic Optical Properties in Layered GaTe for Polarization‐Sensitive Applications

Kotha

Kaloyeros

Murray

et al. 2021

Advanced Photonics Research

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2D layered materials have attracted extensive interest due to their direct electronic bandgap, efficient light-matter coupling, and exciting anisotropic material properties. The anisotropic optical and electronic properties in these materials are vital for the creation of polarization-sensitive optoelectronic devices, such as polarization-dependent photodetectors, sensors, and sources. [1] Currently, most photodetectors provide information about the brightness and color of an object obtained from the intensity and wavelength of absorbed light. However, another fundamental property of light, the polarization of the electric field, can offer enhanced details about an image that is unobtainable from traditional thermal or visible imaging. As a result, polarization-resolved imaging has gained interest for use in applications in various fields, spanning from vehicle navigation, [2] finger printing, [3] and the study of astronomical objects [4] to facial recognition, obstacle detection, and military surveillance. [5,6] In addition, polarizationsensitive imaging has been used in the biomedical field for the study of microcirculation in humans, [7] imaging for retinal surgery, [8] and detection of cancer at early stages. [9] In addition to detection of polarized light, it is essential to control both the polarization and directionality of light emission for several applications, such as sensing, polarized light emission, and optical communication. [10,11] Resolving the polarization state of light requires additional elements that are otherwise unneeded in a photodetector, such as gratings or polarizers. Consequently, these systems require sophisticated integration schemes to enable proper alignment of these elements during device patterning. [12] Conversely, a class of 2D materials with strong inherent structural and optical anisotropy caused by their chain-formation structure extending in one crystal direction can potentially enable the fabrication of flexible stretchable polarization-sensitive devices, lifting some of the current stringent fabrication requirements. This class of materials includes transition metal monochalcogenides, GeS, [13] GeSe, [14] dichalcogenides, such as ReS 2 , [12] ReSe 2 , [15] and GeSe 2 , [16] and trichalcogenides ZrS 3 . [17] Most recently monoclinic gallium telluride (GaTe) [18][19][20] has emerged as a promising material platform for polarizationsensitive photodetection applications. The in-plane optical anisotropy behavior of monoclinic GaTe is caused by its pseudo-1D nature, as each layer comprises a chain-like structure extending along the b-axis direction. Furthermore, a study by Wang et al. [21] has reported that layered GaTe flakes exhibit in-plane anisotropic resistance and can be used to create direction-sensitive data storage devices/sensors. The measured ratios of electrical conductivity along directions parallel and perpendicular to the b-axis (chain direction) can reach up to an order of 10 3 based on the applied gate voltage. So far, no study translating these anisotropic pr...

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Temperature dependence of photoluminescence of layer semiconductor p-GaTe

Cited by 26 publications

References 11 publications

Recombination processes in unintentionally doped GaTe single crystals

Recombination processes in unintentionally doped GaTe single crystals

Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot

Wavelength‐Dependent Anisotropic Optical Properties in Layered GaTe for Polarization‐Sensitive Applications

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