Temperature dependence of low frequency noise mechanisms in Schottky barrier structure

New Model for Low-Frequency Noise in Poly-Si Resistors

“…The low-frequency noise model can then be readily provided by models for the Schottky barrier, namely, thermal activation, tunneling and random walk of electrons. These three mechanisms bring about the current fluctuation via barrier height modulation, with the noise spectral power density proportional to the square of the current [6][7][8][9]. The mobility and diffusivity model [10] can be discarded since the model predicts a linear current dependence of the noise current spectral power density, contrary to the experimental observation.…”

“…For carrier number fluctuation, there are three mechanisms for current fluctuation by trapping and detrapping of carriers at the depletion region of the barrier and the interface, via barrier height modulation. The mechanisms are thermal activation, tunneling involving bulk traps, and random walk of carriers into the interface states [6][7][8][9]. At room temperature, thermal activation dominates tunneling, unless the poly-Si is highly doped.…”