Temperature Dependence of InGaN Dual-Junction Solar Cell

Mesrane, A.; Mahrane, Achour; Rahmoune, F.; Oulebsir, A.

doi:10.1007/s11664-017-5310-6

Cited by 10 publications

(5 citation statements)

References 20 publications

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“…The description of the nanostructures under study is included in Figure 1 and the corresponding confinement potential shapes are given in Eqs. ( 2) - (4).…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…Group-III nitrides inherent properties, such as its direct band-gap, adjustable from 0.64 to 3.38 eV [1], [2], radiation resistance [5] and high absorption coefficient [3,4], and also make the ternary (In,Ga)N compound semiconductor material an tremendous attractive candidate for photovoltaic applications, lightemitting diodes (LEDs) and Laser diodes [6]. Due to the importance of low-dimensional Nano-systems in the development of new semiconductor devices and applications, the effects of external perturbation such as electric field, magnetic field, temperature and pressure on their physical and chemical properties constitute a subject of considerable interest from both theoretical and technological point of view.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Temperature-Related Electronic Low-Lying States in Different Shapes In.1Ga.9N/GaN Double Quantum Wells under Size Effects

Belaid

Ghazi²,

En-nadir³

et al. 2022

Trends Sci

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In this paper, we report the electronic states of hydrogenic impurity in InGaN/GaN double quantum wells (DQWs) with different shapes using a numerical procedure within the effective mass approximation. The effects of temperature, impurity position and size on the 1S-, 2S- and 2P-low-lying states are investigated for rectangular, parabolic and triangular finite potential confinements. Our results reveal that the binding energy versus the well width displays a maximum value around the effective Bohr radius and a larger value is obtained for rectangular compared to parabolic and triangular profiles. Moreover, regardless the size and impurity’s position, it is found that the main impact of the temperature is to shrink the binding energy. It is obtained that the binding energy drop is about 3.48 meV for rectangular and 4.26 meV for both parabolic and triangular profiles. Moreover, as the impurity is moved from the right barrier center to the structure center, the 1S-binding energy improvement is about 77.6 % in rectangular whereas it exceeds 91.4 % for other profiles. It is established that the binding energy can be easily modulated by adjusting the temperature, structure size and impurity's position. The results we obtained agree quite well with the findings. HIGHLIGHTS The maximum binding energy is obtained around the effective Bohr radius The binding energy is higher for rectangular shape compared to parabolic and triangular ones The main impact of the temperature is to shrink the binding energy The binding energy is improved with displacing the impurity toward the structure center

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“…The description of the nanostructures under study is included in Figure 1 and the corresponding confinement potential shapes are given in Eqs. ( 2) - (4).…”

Section: Theoretical Frameworkmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature-Related Electronic Low-Lying States in Different Shapes In.1Ga.9N/GaN Double Quantum Wells under Size Effects

Belaid

Ghazi²,

En-nadir³

et al. 2022

Trends Sci

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show abstract

“…The parameters used in simulation were presented in Table 1.The thermal coefficients were got from appropriate references. From Ref [11] and [12] we have extracted the heat coefficient of Mo.…”

Section: Physics Mesh and Simulationmentioning

confidence: 99%

“…Other than poor crystalline quality and the detrimental effect of polarization charges, an effect link to the non-uniform temperature distribution also exists in the final photovoltaic cell which may explain the difference between the experimental results and what was theoretically expected. This effect of the temperature on the solar cell performance has been investigated by many authors [10][11][12][13]. In these numerical works the temperature is treated as a parameter.…”

Section: Introductionmentioning

confidence: 99%

COMSOL Simulation of Heat Distribution in InGaN Solar Cells: Coupled Optical-Electrical-Thermal 3-D Analysis

Ammar

Belghouthi²,

Aoun

et al. 2022

DDF

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Thermal distribution in solar cells has been rarely investigated despite it significant impact on the performance. The current contribution presents a COMSOL Multiphysics 3-D analysis of the electrical and optical photogeneration properties in relation with the heat distribution in InGaN solar cell. For this simulation, we have coupled the “Semiconductor Module”, the “Heat Transfer Module for Solids,” and the “Wave Optics Module” allowing us to calculate the Shockley–Read–Hall heating, the total heat flux, the Joule heating the carrier’s concentration, the electric field, and the temperature dissipation in the InGaN solar cell structure. Despite the fact that the achievements of InGaN solar cells are still mostly at the state of laboratory studies, the current contribution presenting original results on coupled phenomena occurring in the cells makes it possible to highlight new possible guidelines for an improve of their efficiency.

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“…It is, thus, important to understand the thermal stress properties of InGaN QW solar cells [7]. Few in-depth studies underlined the interest of the thermal properties of the InGaN-MQW solar cell [8]. Their results show that the increase in temperature decreases the efficiency η and the open circuit potential Voc.…”

Section: Introductionmentioning

confidence: 99%

Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells

et al. 2019

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In this paper, a numerical model allows to analyze the photovoltaic parameters according to the electronic properties of InxGa1−xN/GaN MQW solar cells under the effect of temperature, the number of quantum wells and indium composition. The numerical investigation starts from the evaluation through the finite difference (FDM) simulation of the self-consistent method coupled with the photovoltaic parameters taking into account the effects of the spontaneous and piezoelectric polarization. The results found were consistent with the literature. As expected, the temperature had a negative impact on the performance of InGaN/GaN MQW solar cells. However, increasing the number of quantum wells improves cell performance. This positive impact further improves with the increase in the indium rate. The obtained results were 28 mA/cm2 for the short-circuit current density, 1.43 V for the open-circuit voltage, and the obtained conversion efficiency was 31% for a model structure based on 50-period InGaN/GaN-MQW-SC under 1-sun AM1.5G.

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Temperature Dependence of InGaN Dual-Junction Solar Cell

Cited by 10 publications

References 20 publications

Temperature-Related Electronic Low-Lying States in Different Shapes In.1Ga.9N/GaN Double Quantum Wells under Size Effects

Temperature-Related Electronic Low-Lying States in Different Shapes In.1Ga.9N/GaN Double Quantum Wells under Size Effects

COMSOL Simulation of Heat Distribution in InGaN Solar Cells: Coupled Optical-Electrical-Thermal 3-D Analysis

Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells

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