Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodes

Cova, Paolo; Singh, Arjun

doi:10.1016/0038-1101(90)90003-w

Cited by 158 publications

(50 citation statements)

References 19 publications

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“…There is hardly any change of ideality factor between the two measurement temperatures of 300 and 77 K using Eq. (10). This shows that the observed variation in the ideality factor cannot be explained by image force lowering.…”

Section: Effect Of Image Forcementioning

confidence: 60%

“…Thermionic emission (TE) theory is normally used to extract the SBD parameters [1][2][3][4][5][6][7], however, there have been several reports of certain anomalies [4,[7][8][9] at low temperatures. The ideality factor and barrier height determined from the forward bias current-voltage ðI2VÞ characteristics on the basis of the TE mechanism were found to be a strong function of temperature and doping concentration [5,[9][10][11][12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Hudait

Krupanidhi

2001

Physica B: Condensed Matter

119

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The barrier height and ideality factor of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy (MOVPE) on undoped and Si-doped n-GaAs substrates were determined in the doping range of 2.5 Â 10 15 -1 Â 10 18 cm À3 at low temperatures. The thermionic-emission zero-bias barrier height for current transport decreases rapidly at concentrations greater than 1 Â 10 18 cm À3. The ideality factor also increases very rapidly at higher concentration and at lower temperature. The results agree quite well with thermionic field emission (TFE) theory. The doping dependence of the barrier height and the ideality factor were obtained in the concentration range of 2.5 Â 10 15 -1.0 Â 10 18 cm À3 and the results are well described using TFE theory. An excellent match between the homogeneous barrier height and the effective barrier height was observed which supports the good quality of the GaAs film. The observed variation in the zero-bias barrier height and the ideality factor can also be explained in terms of barrier height inhomogeneities in the Schottky diode. r

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Section: Effect Of Image Forcementioning

confidence: 60%

Section: Introductionmentioning

confidence: 99%

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Hudait

Krupanidhi

2001

Physica B: Condensed Matter

119

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“…In an n-type semiconductor, the energy of the interface states with respect to the bottom of the conduction band at the surface of the semiconductor, E ss , is given by [17][18][19][20][21][22][23] …”

Section: Methods Of Analysismentioning

confidence: 99%

“…It has been reported [8,19,28,29,31] that an effective interfacial layer of non-zero thickness must exist between the metal and semiconductor even when both are in intimate atomic contact. Films of thickness of 10-25 A , usually lead to values of the ideality factor in the range of 1.18-1.30 [8,18,28].…”

Section: Methodsmentioning

confidence: 99%

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

Hudait

Krupanidhi

2001

Materials Science and Engineering: B

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The current-voltage (I -V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs Schottky diodes on n-Ge substrates are investigated and compared with characteristics of diodes on GaAs substrates. The diodes show the non-ideal behavior of I-V characteristics with an ideality factor of 1.13 and barrier height of 0.735 eV. The forward bias saturation current was found to be large (3 ×10 − 10 A vs. 4.32 × 10 − 12 A) in the GaAs/Ge Schottky diodes compared with the GaAs/GaAs diodes. The energy distribution of interface states was determined from the forward bias I -V characteristics by taking into account the bias dependence of the effective barrier height, though it is small. The interface states density was found to be large in the Au/n-GaAs/n-Ge structure compared with the Au/n-GaAs/n + -GaAs structure. The possible explanation for the increase in the interface states density in the former structure was highlighted.

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“…Furthermore, in n-InP semiconductor, the energy of interface states (E ss ) with respect to the bottom of the conduction band at the surface of the semiconductor is given by Cova and Singh [37] …”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent electrical parameters and current transport mechanisms of Ru/Ti/n-InP Schottky diodes

Reddy¹,

Padmasuvarna

Narasappa

et al. 2015

Indian J Phys

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The temperature-dependent electrical properties of Ru/Ti/n-InP Schottky diodes have been investigated in the temperature range of 120 to 400 K. The estimated barrier heights for the Ru/Ti/n-InP Schottky barrier diode from the I-V and C-V characteristics vary from 0.24 to 0.73 eV (I-V) and 0.94 to 0.74 eV (C-V) and the ideality factor (n) from 4.65 to 1.80 in the temperature range of 120-400 K. It has been observed that the ideality factor decreases while the barrier height increases with the increase in temperature. The barrier height (U b ), ideality factor (n) and series resistance (R s ) of the Ru/Ti/n-InP Schottky diode have been also determined using Cheung's and Norde methods. The discrepancy between the barrier heights obtained from the I-V and C-V characteristics is discussed. The interface state densities (N ss ) extracted for the Ru/Ti/n-InP Schottky diode are in the range of 6.75 9 10 13 eV -1 cm -2 (E c -0.23 eV)-1.09 9 10 14 eV -1 cm -2 (E c -0.17 eV) at 120 K and 1.67 9 10 13 eV -1 cm -2 (E c -0.75 eV)-5.02 9 10 13 eV -1 cm -2 (E c -0.59 eV) at 400 K. It is observed that the interface state density (N ss ) decreases with increase in temperature. Results reveal that the conduction current is dominated by Poole-Frenkel emission in the temperature range from 120 to 320 K and by Schottky emission above 360 K.

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Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodes

Cited by 158 publications

References 19 publications

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

Temperature-dependent electrical parameters and current transport mechanisms of Ru/Ti/n-InP Schottky diodes

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