Temperature dependence of electron concentration in intrinsic‐like HgTe

Szlenk, K.

doi:10.1002/pssb.2220950214

Cited by 13 publications

(3 citation statements)

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“…Among the binary materials, the mercury chalcogenides have a special place since they are semimetals with a particularly simple band structure. In particular, bulk HgTe has been extensively studied. − …”

Section: Introductionmentioning

confidence: 99%

Mid-IR Colloidal Nanocrystals

et al. 2013

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Colloidal quantum dots presenting optoelectronic properties into the mid-infrared are reviewed with an emphasis on HgTe. Interband transitions with narrow band gap material and intraband transitions with wide band gap semiconductors can both address the infrared range of wavelengths. Semimetals are particularly promising since, by controlling the particle size, a gap can in principle be opened and tuned through the full infrared spectrum. HgTe has been quite successful recently, and colloidal synthesis has allowed the tuning of the absorption edge from 1 and 5 µm at room temperature. The cutoff wavelength and absorption coefficient of these materials have been discussed. Electrochemistry experiments have demonstrated that both n and p nanoparticles are stable. Films of the HgTe colloidal quantum dots have shown room temperature photoconduction when excited in the mid-IR. With novel processing leading to improved detectivity, these materials are becoming of significant interest as an alternative to the much more expensive epitaxial detector technologies.

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Section: Introductionmentioning

confidence: 99%

Mid-IR Colloidal Nanocrystals

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Section: Mobility Of Electrons and Holesmentioning

confidence: 99%

“…The resonant scattering by acceptor states ') In other papers the intrinsic concentration of electrons was estimated from Hall coefficient data assuming an intrinsic conduction of the investigated samples. A partial discussion of this problem is given in[33].describes the electron mobility in the vicinity of 9 I< [lri, 231 (not seen in the sample G4), but the interband optical phonon scattering lirrlits the electron mobility around40 K [17]. I n view of great similarities between the heavy hole valence bands of InSb-type semiconductors one should expect a common description of the hole mobility in the whole group.…”

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The Mobility of Electrons and Holes in HgTe in the Temperature Range of Intrinsic Conduction

Dziuba

Wróbel

1980

Physica Status Solidi (b)

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HgTe samples containing no acceptors are studied. The results of the investigation of Hall coefficient and conductivity versus magnetic field up to 20 kG in the temperature range 4 up t o 100 K are presented. Concentration and mobility of electrons and holes in the intrinsic range of the conductivity are calculated. Density state effective mass of holes mh = 0.3m0 is determined. It is shown that acoustic and optical phonon scattering are most important modes limiting the hole mobility.HgTe-Proben ohne Akzeptordotierung werden untersucht. Die Ergebnisse der Nessungen des Hallkoeffizienten und der Leitfiihigkeit werden als Funktion der magnetischen Feldstiirke bis zu 20 kG und im Temperaturbereich 4 bis 100 K vorgestellt. Konzentrationen und Beweglichkeiten von Elektronen und Lochern im Eigenleitungsgebiet werden berechnet. Die effektive Nasse der Locher wird zu mh = 0,3 m,, bestimmt. E s wird gezeigt, daB die akustische und optische Phononenstreuung der Hauptmechanismus ist, der die Locherbeweglichkeit begrenzt. IntroductionMercury telluride is a semiconductor with an inverted band structure [ l , 21. Recent papers concerning the physical properties of HgTe present consistent information about conduction band parameters [3 to 13, 251 and electron scattering mechanisms [14 to 191. The parameters of the valence band and the properties of holes in HgTe were investigated occasionally and rather scarce information is available.A problem which attained a wide interest is that concerning the impurity levels in HgTe [20 to 231. Electrical and optical properties of this semimetal depend sensitively on the presence of the resonant acceptor states. They manifest themselves as an additional density of states in the magnetooptical experiments [21, 221, and in the temperature dependence of the electron concentration [23, 271. They act also as the scattering centres seen in the temperature dependence of the electron mobility [l6]. The anomalous magnetic field dependence of the Hall coefficient and the Conductivity at low temperatures explained as a contribution of low-mobility electrons is correlated with the presence of the acceptor states [26, 271. These acceptor states were observed in all reported in the literature investigations of HgTe samples, even in those of very high purity. The contribution of low-mobility electrons to the conductivity makes the full analysis of the transport properties very difficult. I n this paper we show that samples containing no acceptor states are free of the low-mobility electrons as well. For these HgTe samples a full analysis of the transport properties was performed.

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On the Anomalies in the Temperature Dependence of Conductivity in Hg_1−xCd_xTe

Arapov

Давыдов

Tsidilkovskii

et al. 1982

Physica Status Solidi (b)

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The temperature (1.8 K T 5 77 K) and magnetic field (0 5 H 22 kOe) dependence of the conductivity (r, longitudinal magnetoconductivity a , , , and of the Hall coefficient R for gapless Hgl-,Cd,Te crystals are measured. At temperatures Tmin = 6 to 11 K there occur deep minima of conductivity (r(T). It is shown that the origin of these minima cannot be accounted for by the resonance scattering of electrons by acceptors. The miiiima in o(T) arise from the decrease in electron mobility caused by the increa% of the number of charged centres with increasing temperature when T < T m i n and by the increase of the concentration of electron-hole pairs when T > > Tmin. Thc anomalies in the conductivity (plateau) and the Hall effect (double inversion of sign) observed in the temperature range 20 K < T < 40 K are due to the contribution of three types of carriers, viz. light conduction band electrons, heavy acceptor band electrons, and valence band holes.Die Teniperntclr (1,s K 5 T 5 77 R)-und Magnetfeld (0 H 5 22 k0e)-Abhiingigkeit der Leita fahigkeit (r, die longitudinalc Magnetoleitfahigkeit uzzt und der Hallkoeffizient R werden fur gaplose Hgi -ZCd,Te-Kristalle gemessen. Bei Temperaturen Tmjn = 6 bis 11 I ( treten tiefe Minima der LeitfShigkeit a( T) auf. Es wird gezeigt, daB der Ursprung dieser Minima nicht mit der Resonanzstrenung voii Elektronen durch Akzeptoren erkliirt werden kann. Die Minima in a( 2') rhhren von dem Abfall der Elektronenbeweglichkeiten her,. der durch das Anwachsen der Zahl der geladenen Zentren mit zunehmender Temperatur, wenn T < Tmin, und durch den Anstieg der Konzentration der Elektron-Loch-Paare, wenn T > Tmin ist, hervorgerufen wird Die Anomalien dcr Leitfahigkeit (Plateau) und des Hall-Effekts (doppelte Inversion des Vorzeichens), die im Temperaturbereich 20 K < T < 40 K beobachtet werden, werden durch den Beitrag vondrei'A t e n Ton Lidungstragern verursacht : Ieichte Leitungsbandelektronen, schwere Akzeptorbandelektronen und Valenzbandlocher. InirodiictioiiGapless p-type semiconductors HgTe and Hgl-,Cd,Te with a cadmium content of x < 0.16 have repeatedly exhibited two features peculiar to the temperature dependence of conductivity G, viz. a minimum at T == 9 K [l to 61 and a plateau a t T = 20 to 40 B [l, 2, 7 to 151. Since the problem concerning these peculiarities remains yet to be ascertained we have undertaken a new attempt to examine the reaaons for the

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Temperature dependence of electron concentration in intrinsic‐like HgTe

Cited by 13 publications

References 19 publications

Mid-IR Colloidal Nanocrystals

Mid-IR Colloidal Nanocrystals

The Mobility of Electrons and Holes in HgTe in the Temperature Range of Intrinsic Conduction

On the Anomalies in the Temperature Dependence of Conductivity in Hg_1−xCd_xTe

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Temperature dependence of electron concentration in intrinsic‐like HgTe

Cited by 13 publications

References 19 publications

Mid-IR Colloidal Nanocrystals

Mid-IR Colloidal Nanocrystals

The Mobility of Electrons and Holes in HgTe in the Temperature Range of Intrinsic Conduction

On the Anomalies in the Temperature Dependence of Conductivity in Hg1−xCdxTe

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On the Anomalies in the Temperature Dependence of Conductivity in Hg_1−xCd_xTe