Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field‐Effect Transistors: A Quantum Simulation Study

Naderi, Ali; Noorbakhsh, S. Mohammad; Elahipanah, Hossein

doi:10.1155/2012/532625

Cited by 33 publications

(20 citation statements)

References 30 publications

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“…But at lower gate voltage, quantum tunnelling current has an effect on the temperature. The current increases with the temperature, but with different rates for different regions of operation [21], [22], [23], [24].…”

Section: Resultsmentioning

confidence: 99%

Impact of Temperature on Electrical Characteristics of Ballistic Carbon Nanotube Field Effect Transistor for Different Dielectrics

Nayan¹

2019

International Journal of Innovative Research in Electrical, Ele

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Carbon Nanotube Based Field Effect Transistors (CNTFET) are being extensively studied as a counterpart device of silicon compatible CMOS. This paper presents a numerical simulation model of semiconducting carbon nanotube based field effect transistor to derive the electrical characteristics under ballistic regime. This technique is considered the approximation of non-equilibrium mobile charge density to get the fast and efficient modelling of drain current. The influence of gate dielectric constant and temperature on the performance of a carbon nanotube field-effect transistor has been studied by a numerical simulation model. Moreover, the impact of temperature has been portrayed for different gate voltage to observe the performance of the transistor.

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Section: Resultsmentioning

confidence: 99%

Impact of Temperature on Electrical Characteristics of Ballistic Carbon Nanotube Field Effect Transistor for Different Dielectrics

Nayan¹

2019

International Journal of Innovative Research in Electrical, Ele

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“…has obtained at k = 24. DIBL is one of the critical parameter that affects the performance of the device vary detrimentally (Naderi et al, 2012). The value of DIBL increases with increase in k of gate dielectric material.…”

Section: Effect Of Dielectric Constant Of Gate Dielectric On Potentiamentioning

confidence: 99%

GaAs SOI FinFET: impact of gate dielectric on electrical parameters and application as digital inverter

Saha¹,

Bhowmick²,

Baishya³

2018

IJNP

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In this paper, a GaAs SOI (silicon on insulator) FinFET is proposed. A comparative study between proposed GaAs FinFET and conventional Si FinFET is presented. The effects of dielectric constant (k) of gate dielectric material on electrical parameters like channel potential, drain current, and I on /I off have been reported. Results show that as k raises, both I on /I off and channel potential increases. Again the impact of k on short channel effects (SCEs) has been investigated. TCAD results show that as k increases subthreshold swing (SS) improves, drain induced barrier lowering (DIBL) degrades, and V T roll off occur. The impacts of k on gate capacitance (C GG) and intrinsic delay (τ) have been presented and they increases as k increases. A digital CMOS inverter is implemented through proposed FinFET and the effect of k on its delay parameter is estimated. Results shows that average delay increase as k increases.

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“…As the mobile current is determined by the local density of state at the top of the barrier, location of the source and drain levels, 1 and 2 and self-consistent potential at the top the barrier, So finally the drain current can be found by the equation as follows [9] Here, is the Boltzmann constant, is the Operating Temperature.…”

Section: Mathematical Modelmentioning

confidence: 99%

“…In fact such kinds of qualities make CNTFET way better than MOSFET though it dispenses electrons from source terminal to drain terminal just like MOSFET [3][4][5][6]. One most important feature of CNTFET is their 1dimentional characteristics because of that the carriers are confined in the carbon nanotube(CNT) and this results rise to a strong quantization of carriers states and charge transport becomes possible in room temperature in the 1D sub-band of CNT.…”

Section: Introductionmentioning

confidence: 99%

Performance Analysis of Current Ratio under Different Dielectric Constant for Carbon Nanotube Field Effect Transistor

Rahman¹,

Sagar²,

Tasnim³

et al. 2016

International Journal of Advanced Research in Computer and Comm

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This paper represents carbon nanotube field effect transistors (CNTFETs) under ballistic condition with FETTOY Model based on the changes of gate oxide thickness and tube diameter, the performance has been observed as a function of dielectric constant of oxide material. Details observation of the combined ballistic effect on the basis of the performance of CNTFETs has been emphasized and the outcome of the device has been explored. Throughout the process, the effect of gate oxide material on the ON-state to OFF-state current ratio has been analyzed considering tube diameter and oxide thickness as constants and it is observed that after a certain value of the dielectric constant of oxide material the current ratio remains unchanged. Gate oxide thickness and tube diameter has also been varied to determine their effect on the ON-state to OFF-state current ratio which also indicates a range of diameter and oxide thickness to maintain unchanged current ratio.

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Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field‐Effect Transistors: A Quantum Simulation Study

Cited by 33 publications

References 30 publications

Impact of Temperature on Electrical Characteristics of Ballistic Carbon Nanotube Field Effect Transistor for Different Dielectrics

Impact of Temperature on Electrical Characteristics of Ballistic Carbon Nanotube Field Effect Transistor for Different Dielectrics

GaAs SOI FinFET: impact of gate dielectric on electrical parameters and application as digital inverter

Performance Analysis of Current Ratio under Different Dielectric Constant for Carbon Nanotube Field Effect Transistor

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