Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer

Abstract

We have investigated temperature dependence (94 K–650 K) of current conduction in semi-insulating 4H-SiC epitaxial layer. The epitaxial layer was grown on highly doped n-type (0001) 4H-SiC substrate using chemical vapor deposition with dichlorosilane precursor. The current—voltage (I-V) characteristics exhibited steps at ∼1 V and ∼70 V that were attributed to the filling of deep level centers by injected electrons. Correlation of the I-V characteristics with the results of thermally stimulated current measurements showed that deep centers peaked at 242 K, 285 K, and 500 K, were responsible for the steps in the I-V characteristics. Slow processes of the injected carrier capture on traps resulted in the I-V characteristic with negative differential resistance.

Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers

“…These dislocation densities are much lower than that reported earlier 7 reflecting improved quality of the epitaxial layer used in this study.…”

High-resolution x- and γ-ray detection using 4H-SiC n-type epitaxial layer

“…The hysteresis indicates a possible influence of the interface/bulk states and/or interface dipoles on the I-V characteristics. We have observed similar hysteresis in SI 4H SiC epitaxial detectors [8] which was attributed to the difference in the potential distribution at the Ni/SI-SiC and SI SiC/n+SiC interfaces. Further studies are underway to explain the observed hysteresis in the I-V characteristics.…”

“…maximum temperatures and results of our work [5], [7],[8], where we perfonned TSC studies of n-type and SI 4H-SiC samples using similar conditions. The peak #3 (Tm � 226 K) may be due to D-center, a B-related defect, boron at C-site (Be) or boron at Si site (Bsi) and carbon vacancy V c[9], whereas peak #4 represent intrinsic defects such as IL l center[10],[11].B.…”

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

“…Semi-insulating 50 Good SI-M50 n-typen 50 Good n-M50 n-typen 50 Superior n-S50 n-typen 20 Superior n-S20 Figure 2 represents the I-V characteristics for semi-insulating 4H-SiC epitaxial (SI-M50) samples [14]. It can be observed from the graphs that the I-V characteristics are asymmetric with respect to the polarity of the applied bias.…”