Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P

Abstract

The temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P, lattice-matched to GaAs, has been measured on a series of p+-i-n+ and n+-i-p+ diodes with nominal avalanche region thicknesses ranging from 0.068 to 1.0 μm from 77.8 to 298 K. From this, impact ionization coefficients as a function of temperature have been determined. For a given avalanche region thickness, Al0.52In0.48P exhibits temperature coefficient of breakdown voltage smaller than those of Ga0.52In0.48P and Al0.6Ga0.4As by approximately 1.6× and 2.0×, respectively. Our analysis shows that the alloy disorder potential and alloy composition ratio may be responsible for the large variation in temperature coefficient of breakdown voltages observed in a range of III–V ternary semiconductors.

Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP

“…al. [38] based on the electronegativity difference of Phillips [39]. Changing the temperature to 210K while keeping the other parameters essentially identical shows that the model produces results that are in good agreement with β from the experimental measurements for both AlAsSb and InAlAs at this temperature.…”

Thin Al 1− x Ga x As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown

“…Alloy disorder potential analyses in [ 11 ] indicated that the very small C bd values for AlAs 0.56 Sb 0.44 diodes could have originated from significant alloy scattering, because of very different covalent radii of the Sb and As atoms. The ratio between the As and the Sb is the same for the AlAs 0.56 Sb 0.44 and the Al 1− x Ga x As 0.56 Sb 0.44 diodes, hence similarly small C bd are perhaps not surprising for the Al 1− x Ga x As 0.56 Sb 0.44 diodes in this work.…”

Impact Ionization Coefficients in (Al x Ga1-x )0.52In0.48P and Al x Ga1-x As Lattice-Matched to GaAs

“…The wide bandgap of AlGaInP also results in minimal variation in breakdown voltage and dark currents with temperature [6], [7] and AlInP X-ray detectors with good high-temperature performance have been reported [8]. The dark currents and temperature dependence characteristics of AlInP and GaInP devices [6] compare favorably with recently reported GaN APDs grown on GaN substrates [9], but with the advantage of the low cost and mature technology associated with GaAs substrates. There is also interest in GaAs-based SAM-APDs with wide bandgap multiplication regions, using GaNAsSb and GaSb absorption regions for SWIR detection [10], [11].…”

“…AlGaInP APDs exhibit negligible dark currents even at fields close to breakdown [4], and the excess noise factor in thin AlInP devices has been shown to be similar to that in silicon [5]. The wide bandgap of AlGaInP also results in minimal variation in breakdown voltage and dark currents with temperature [6], [7] and AlInP X-ray detectors with good high-temperature performance have been reported [8]. The dark currents and temperature dependence characteristics of AlInP and GaInP devices [6] compare favorably with recently reported GaN APDs grown on GaN substrates [9], but with the advantage of the low cost and mature technology associated with GaAs substrates.…”