Temperature dependence of amorphization and precipitation processes in Ni+- and N+-implanted NixTi1−x alloys

Delage, J.; Popoola, Oludele O.; Villain, Jacques; Moine, Pierre

doi:10.1016/0921-5093(89)90668-0

Cited by 21 publications

(3 citation statements)

References 12 publications

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“…[11]. These activation energies, however, are similar in magnitude to activation energies previously reported for irradiation-enhanced epitaxial recrystallization in other materials [9,12].…”

Section: Resultssupporting

confidence: 87%

Effect of temperature and recoil-energy spectra on irradiation-induced amorphization in Ca{sub 2}La{sub 8}(SiO{sub 4}){sub 6}O{sub 2}

Weber¹,

Wang²

1993

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Single crystals of Ca,,l..,as(SiO4)60_ " have been irradiated with different ions/energies in an in situ study of the effects of temperature and recoil-energy spectra on irradiation-induced amorphizatio,. The dose for compete amorphization increases with temperature in two stages. The low-temperature stage (below 250 Ix-'),. has an activation energy of 0.01 _.+ 0.003 eV and is believed to be associated with simultaneous close-pair recombination. The high-temperature stage (above 250 K) has an activation energy of 0.1.3 __.0.02 eV and may be associated with irradiation-enhanced defect mobility. The critical temperature for amorphization increases from-360 K for 0.8 MeV Ne* to-710 K for 1.5 MeV Kr*. At 15 K, the amorphization dose is-0.36 dpa and is independent of recoil-energy spectra. The amorphization dose increases more rapidly with temperature for Ne" due to the larger fraction of mobile defects produced by the low energy recoils. The temperature dependence is similar for 1.

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Section: Resultssupporting

confidence: 87%

Effect of temperature and recoil-energy spectra on irradiation-induced amorphization in Ca{sub 2}La{sub 8}(SiO{sub 4}){sub 6}O{sub 2}

Weber¹,

Wang²

1993

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“…The activation energies determined for Stage II recovery are 0.12 + 0.02 eV and 0.09 ± 0.02 eV for the 1. irradiation-produced defects, although the relative concentrations are different. These activation energies are also similar in magnitude to activation energies previously reported for 3-SiC [7] and for irradiation-enhanced recovery processes in other materials [11][12][13][14]. Based on the activation energies, Ea, and intercepts, C, determined for the Stage II data, Tc in ct-SiC is estimated to be 295 K under 2 MeV electron irradiation and 485 K under 1.5 MeV Xe t irradiation.…”

Section: Resultsmentioning

confidence: 63%

In Situ Study of the Temperature Dependence of Irradiation-Induced Amorphization in A-Sic

Weber

Wang

et al. 1995

MRS Proc.

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Ion-beam-induced amorphization in single crystal a-SiC has been studied as a function of temperature. Specimens have been irradiated with 1.5 MeV Xe' ions over the temperature range from 20 to 475 K using the HVEM-Tandem Facility (ANL), and the evolution of the amorphous state has been followed in situ in the HVEM. Specimens also have been irradiated at 170, 300, and 370 K with 360 keV Ar' ions, and the damage accumulation process followed in situ by Rutherford backscattering spectroscopy/channeling using the dual beam facilities at the Ion Beam Materials Laboratory (LANL). At 20 K, the displacement dose for complete amorphization is 0.25 dpa and increases with temperature in two stages. The activation energy associated with the simultaneous recovery processes above 100 K is 0.12 ± 0.02 eV. The critical temperature above which amorphization does not occur is 485 K under the 1.5 MeV Xe' irradiation conditions. Ion channeling results suggest that the rate of simultaneous recovery increases with temperature only above a critical damage level. Raman spectroscopy indicates that rapid chemical disordering occurs during irradiation.

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“…This annealing process competes with irradiation-induced amorphization and dominates above Tc, thus preventing amorphization. A temperature dependence study of amorphization in Ni+-and N+-implanted NixTil-x alloys has revealed two very similar processes with distinct activation energies occurring at low and high temperature regimes, respectively [18]. In the case of zircon, the activation energy associated with irradiation-enhanced epitaxial recrystallization, 0.31 eV, is r-nearly identical to an earlier measurement, 0.30 eV, [13]; however, it is considerably less than _: the activation energy for fission fragment track annealing (epitaxial recrystallization) in zircon, _: 3.6 eV [19], and the activation energy for the b_'k recrystallization of fully amorphous zircon, =_' 5.1 eV [7].…”

Section: And Discussion mentioning

confidence: 99%

Temperature and Ion-Mass Dependence of Amorphization Dose for Ion Beam Irradiated Zircon (ZrSiO₄)

et al. 1992

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The temperature dependence of amorphization dose for zircon under 1.5 MeV Kr ion irradiation has been investigated using the HVEM-Tandem Facility at Argonne National Laboratory. Three regimes were observed in the amorphization dose-temperature curve. In the first regime (15 to 300 K), the critical amorphization dose increased from 3.06 to 4.5 ions/nm2. In the second regime (300 to 473 K), there is little change in the amorphization dose. In the third regime (> 473 K), the amorphization dose increased exponentially to 8.3 ions/nm2 at 913 K. This temperature dependence of amorphization dose can be described by two processes with different activation energies (0.018 and 0.31 eV respectively) which are attributed to close pair recombination in the cascades at low temperatures and radiation-enhanced epitaxial recrystallization at higher temperatures. The upper temperature limit for amorphization of zircon is estimated to be 1100 K. The ion-mass dependence of the amorphization dose (in dpa) has also been discussed in terms of the energy to recoils based on data obtained from He, Ne, Ar, Kr, Xe irradiations and a 238Pu-doped sample.

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Temperature dependence of amorphization and precipitation processes in Ni+- and N+-implanted NixTi1−x alloys

Cited by 21 publications

References 12 publications

Effect of temperature and recoil-energy spectra on irradiation-induced amorphization in Ca{sub 2}La{sub 8}(SiO{sub 4}){sub 6}O{sub 2}

Effect of temperature and recoil-energy spectra on irradiation-induced amorphization in Ca{sub 2}La{sub 8}(SiO{sub 4}){sub 6}O{sub 2}

In Situ Study of the Temperature Dependence of Irradiation-Induced Amorphization in A-Sic

Temperature and Ion-Mass Dependence of Amorphization Dose for Ion Beam Irradiated Zircon (ZrSiO₄)

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Temperature dependence of amorphization and precipitation processes in Ni+- and N+-implanted NixTi1−x alloys

Cited by 21 publications

References 12 publications

Effect of temperature and recoil-energy spectra on irradiation-induced amorphization in Ca{sub 2}La{sub 8}(SiO{sub 4}){sub 6}O{sub 2}

Effect of temperature and recoil-energy spectra on irradiation-induced amorphization in Ca{sub 2}La{sub 8}(SiO{sub 4}){sub 6}O{sub 2}

In Situ Study of the Temperature Dependence of Irradiation-Induced Amorphization in A-Sic

Temperature and Ion-Mass Dependence of Amorphization Dose for Ion Beam Irradiated Zircon (ZrSiO4)

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Temperature and Ion-Mass Dependence of Amorphization Dose for Ion Beam Irradiated Zircon (ZrSiO₄)