1995
DOI: 10.1557/proc-398-351
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In Situ Study of the Temperature Dependence of Irradiation-Induced Amorphization in A-Sic

Abstract: Ion-beam-induced amorphization in single crystal a-SiC has been studied as a function of temperature. Specimens have been irradiated with 1.5 MeV Xe' ions over the temperature range from 20 to 475 K using the HVEM-Tandem Facility (ANL), and the evolution of the amorphous state has been followed in situ in the HVEM. Specimens also have been irradiated at 170, 300, and 370 K with 360 keV Ar' ions, and the damage accumulation process followed in situ by Rutherford backscattering spectroscopy/channeling using the … Show more

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