Temperature Compensated Floating Gate MOS Radiation Sensor With Current Output

Garcı́a-Moreno, E.; Isern, E.; Roca, M.; Picos, R.; Font, J.; Cesari, J.; Pineda, A.

doi:10.1109/tns.2013.2277605

Cited by 26 publications

(10 citation statements)

References 12 publications

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“…Hence, researches on the irradiated characteristics and the radiation hardening technique are of great significance [3,4,5]. A number of articles reported about the electrical characteristics of the MOS device under radiation effect [4,5,6,7,8]. V th , as an important electrical parameter of a device, has been studied extensively.…”

Section: Introductionmentioning

confidence: 99%

Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET

Hao¹,

Hu²,

Liao³

et al. 2017

IEICE Electron. Express

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Abstract:The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation. The variation of oxide-trapped charge (N ot ) and interface-trap charge (N it ) with the total dose has also been investigated. A two-dimensional analytical model of threshold voltage (V th ) has been developed with the degradation due to the total dose irradiation taken into consideration. Based on this model, numerical simulation has been carried out by Matlab, and the influence of the total dose, geometry and physics parameters on threshold voltage (V th ) were simulated. In addition, to evaluate the validity of the model, the simulation results were compared with experimental data, and good agreements were confirmed. Thus, the proposed model provides good reference for research on irradiation reliability and application of strained integrated circuit of uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor.

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Section: Introductionmentioning

confidence: 99%

Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET

Hao¹,

Hu²,

Liao³

et al. 2017

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…Hence, researches on the irradiated characteristics and the radiation hardening technique are of great significance [3,4]. Channel current characteristic is an important foundation for the analysis of DC, transient, AC small signal, noise of the uniaxial strained Si nanometer NMOSFET device and circuit.…”

Section: Introductionmentioning

confidence: 99%

Effects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET

Hao¹,

Hu²,

Liao³

et al. 2017

IEICE Electron. Express

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An analytical model of channel current for the uniaxial strained Si nanometer NMOSFET has been developed with the degradation due to total dose irradiation taken into consideration. Based on this model, the numerical simulation has been carried out by Matlab, and the influence of the total dose on channel current was simulated. Furthermore, to evaluate the validity of the model, the simulation results were compared with experimental data, and good agreements were confirmed. Thus, the proposed model provides good reference for research on irradiation reliability of uniaxial strained Si nanometer NMOSFET.

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“…Nonetheless, using the same CMOS technology as in [11] a superior design of dosimeter circuitry based on FG MOSFET was thus reported. plication in radiation dosimetry [28][29][30]. The fundamental operation of these sensor design was the same as initially proposed by other researchers, however they used a different methodology for the detection of the radiation levels.…”

Section: Floating-gate Mosfet Dosimetersmentioning

confidence: 99%

“…With the lowest detectable value of 2 Gy (200 rad) the design sensitivity was measured to be −1.14 µA Gy −1 which was reported in terms of frequency in their final publication, i.e. [30].…”

Section: Floating-gate Mosfet Dosimetersmentioning

confidence: 99%

Low Power Wireless CMOS System-On-Chip X-Ray Dosimeter

Yadegari¹

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Blood sterilization systems irradiate blood with Gamma or X-ray radiation to prevent transfusion-associated graft versus host diseases (TA-GvHD).Present day irradiators use tags applied to the blood bags which change color when exposed to radiation of 25 to 50 Gy. This method is neither accurate nor efficient and results in considerable blood wastage.This thesis investigates alternative solutions that are low power, easy to handle, compact and efficient. A floating-gate (FG) metal-oxide semiconductor field effect transistor (MOSFET) is studied for its application as a radiation sensor. FG MOSFETs have been employed for this application, but never using an RF-CMOS (0.13 µm) process suitable for RF-ID wireless readout. This work studies device optimization for best possible performance in radiation dosimetry. Devices are fabricated with This journey would not have been possible without the unconditional love and support I received from my lovely wife, Ariane, and my parents.

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Temperature Compensated Floating Gate MOS Radiation Sensor With Current Output

Cited by 26 publications

References 12 publications

Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET

Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET

Effects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET

Low Power Wireless CMOS System-On-Chip X-Ray Dosimeter

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