Effects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET

Hao, Minru; Hu, Huiyong; Liao, Chenguang; Wang, Bin

doi:10.1587/elex.14.20170866

Cited by 3 publications

(1 citation statement)

References 8 publications

(7 reference statements)

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“…In this aspect, it is of great significance to research on the radiation-resistant reinforcement of Buck. However, the existing research on radiation-hardened Buck is still limited to the analysis of Buck irradiation test and design of radiation devices [16,17,18,19,20,21,22,23,24], and the research on radiation-hard from circuit design is lacking. In this paper, a radiation-hard adaptive on-time generator is proposed by utilizing of leakage current compensation.…”

Section: Introductionmentioning

confidence: 99%

A radiation-hardened Buck converter

Yang

Luo

et al. 2019

IEICE Electron. Express

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Buck converter is widely used in the aerospace field. However, radiation in the aerospace environment will result in degradation or failure of devices and circuits. This paper presents a radiation-hard Buck, which is an adaptive on-time Buck. A radiation-hard adaptive on-time generator is proposed by utilizing of leakage current compensation. The proposed radiation-hard adaptive on-time generator is composed of an adaptive ontime timing block and a charging current generator. Finally, the proposed Buck is fabricated in a standard 0.18 µm BCD process. And the radiation tests show that the Buck still maintains stability after total ionizing dose irradiation at a total dose of 350 Krad (Si).

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Section: Introductionmentioning

confidence: 99%

A radiation-hardened Buck converter

Yang

Luo

et al. 2019

IEICE Electron. Express

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Comparative study of the effects of HFT(PCB) parasitics on single-ended forward DC/DC converters

Ba,

Lyu,

Wang

et al. 2024

IEICE Electron. Express

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This study investigates the influence of parasitic parameters in high-frequency PCB transformers (HFT(PCB)) on the performance of single-ended resonant aerospace DC/DC converters. An interleaved winding high-frequency PCB transformer, IW-HFT(PCB), was designed and compared with conventional HFT(PCB) in terms of power MOSFET voltage stress, output efficiency, and transformer operating temperature. A 100W aerospace DC/DC converter prototype was developed for validation, demonstrating significant improvements in current density distribution, magnetic field uniformity, reduction of leakage inductance, and thermal management with IW-HFT(PCB). The IW-HFT(PCB) design increased the maximum DC/DC output efficiency by 1.35% and full-load output efficiency by 1.33%. Moreover, peak voltage stress on power MOSFETs was reduced by up to 51.35%, while transformer temperature decreased by 3.9 degrees Celsius.

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Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Luniov

Lyshuk

Maslyuk

et al. 2019

Latvian Journal of Physics and Technical Sciences

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Temperature dependencies for Hall mobility of electrons for the uniaxially deformed n-Si single crystals, irradiated by the flow of electrons Ω=1·1017 el./cm2 with the energy of 12 MeV, are obtained on the basis of piezo-Hall effect measurements. From the analysis of these dependencies it follows that under the uniaxial pressure (0–0.42) GPa and (0–0.37) GPa along crystallographic directions [100] and [111], respectively, the deformation-induced increase of the Hall mobility has been observed. On the basis of the proposed theoretical model of mobility, this increase is explained by the decrease of the amplitude of a large-scale potential with an increase in the magnitude of uniaxial deformation and, accordingly, the probability of electron scattering on this potential. The slight discrepancy between the obtained experimental results and the relevant theoretical calculations at the low temperatures is due to the fact that the electron scattering on the radiation defects, created by the electron radiation, was not taken into account in the calculations. The decrease in Hall mobility of electrons along with an increase in temperature for unirradiated and irradiated silicon single crystals is explained by the growth of the probability of electron scattering on the optical phonons that are responsible for the intervalley scattering in silicon. The obtained results can be used in designing and modelling on the basis of n-Si single crystals of various electronic devices of micro- and nanoelectronics, which can be subject to the extreme conditions of action of the significant radiation and deformation fields.

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Effects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET

Cited by 3 publications

References 8 publications

A radiation-hardened Buck converter

A radiation-hardened Buck converter

Comparative study of the effects of HFT(PCB) parasitics on single-ended forward DC/DC converters

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

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