Temperature-Compensated Devices Using Thin$hboxTeO_2$Layer With Negative TCD

Dewan, Namrata; Sreenivas, K.; Gupta, Vinay

doi:10.1109/led.2006.880644

Cited by 7 publications

(9 citation statements)

References 14 publications

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“…Previously reported results show that in comparison to SiO 2 , TeO 3 thin films possess high value of negative TCD [18,20,21,30,31]. So, with the integration of relatively less thick TeO 3 over layer, a positive TCD device can be made temperature stable [18,19]. Therefore, in the present study, the result of adding TeO 3 over layer over BeO/128 • YX LiNbO 3 bilayer structure on its SAW propagation characteristics have been investigated further.…”

Section: Resultsmentioning

confidence: 84%

“…The positive TCD BeO/128 • YX LiNbO 3 bilayer structure can be made temperature stable by integrating it with an over layer (i.e., SiO 2 and TeO 3 ) possessing negative TCD [21,[29][30][31]. Previously reported results show that in comparison to SiO 2 , TeO 3 thin films possess high value of negative TCD [18,20,21,30,31]. So, with the integration of relatively less thick TeO 3 over layer, a positive TCD device can be made temperature stable [18,19].…”

Section: Resultsmentioning

confidence: 95%

“…where C ijkl is the mechanical stiffness tensor, ε jk is the dielectric permittivity tensor, e kij is the piezoelectric tensor, and ρ is the density of the medium. [12,18,22,23], and are presented in Table 1. The effective coupling of inter digital transducer to the surface-wave is measured in terms of the electromechanical coupling coefficient, K 2 given by [1,26,27]…”

Section: Methodsmentioning

confidence: 99%

“…The device can be made temperature stable by integrating it with negative TCD over layer. TeO 3 films are reported to exhibit negative temperature coefficient of delay [1,[18][19][20][21] and, thus, can be used in the present layered structure to make it temperature stable. The proposed BeO (0.08 λ)/128 • YX LiNbO 3 bilayer SAW structure is integrated with ∼0.026 λ thick TeO 3 over layer to realize a temperature stable device and moreover, the values of SAW phase velocity and electromechanical coupling coefficient remain essentially untouched.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films

Soni

Bhola

2021

Crystals

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The present study depicts the first-ever optimized surface acoustic wave (SAW) device based on Beryllium Oxide (BeO) thin film. The feasibility of surface acoustic wave devices based on BeO/128° YX LiNbO3 layered structure has been examined theoretically. The SAW phase velocity, electromechanical coupling coefficient, and temperature coefficient of delay for BeO/128° YX LiNbO3 layered structure are calculated. The layered structure is found to exhibit optimum value of phase velocity (4476 ms−1) and coupling coefficient (~9.66%) at BeO over layer thickness of 0.08λ. The BeO (0.08λ)/128° YX LiNbO3 SAW device is made temperature stable, by integrating it with negative temperature coefficient of delay (TCD) TeO3 over layer of thickness 0.026λ.

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Section: Resultsmentioning

confidence: 84%

Section: Resultsmentioning

confidence: 95%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films

Soni

Bhola

2021

Crystals

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“…Efforts have been made by various workers towards the measurement of TCD of layered structures based on LiNbO 3 [3,7]. Silicon dioxide (SiO 2 ) and tellurium dioxide (TeO 2 ) are the two known materials that could be used as a temperature compensation layer due to their negative TCD characteristics [3,8,9]. Limited studies have been done on the temperature stability of the diamond based layered structure using an SiO 2 layer [1,10].…”

Section: Introductionmentioning

confidence: 99%

Acousto-optical and SAW propagation characteristics of temperature stable multilayered structures based on LiNbO₃and diamond

Shandilya¹,

Sreenivas²,

Gupta³

2007

J. Phys. D: Appl. Phys.

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Theoretical studies on the surface acoustic wave (SAW) properties of c-axis oriented LiNbO3/IDT/diamond and diamond/IDT/128° rotated Y–X cut LiNbO3 multilayered structures have been considered. Both layered structures exhibit a positive temperature coefficient of delay (TCD) characteristic, and a zero TCD device is obtained after integrating with an over-layer of either tellurium dioxide (TeO2) or silicon dioxide (SiO2). The presence of a TeO2 over-layer enhanced the electromechanical coupling coefficients of both multilayered structures, which acts as a better temperature compensation layer than SiO2. The temperature stable TeO2/LiNbO3/IDT/diamond layered structure exhibits good electromechanical coefficient and higher phase velocity for SAW device applications. On the other hand, a high acousto-optical (AO) figure of merit (30–37) × 10−15 s3 kg−1 has been obtained for the temperature stable SiO2/diamond/IDT/LiNbO3 layered structure indicating a promising device structure for AO applications.

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