Temperature characteristics of polysilicon piezoresistive nanofilm depending on film structure

Liu, Xiaowei; Wu, Yajing; Chuai, Rongyan; Changzhi, Shi; Chen, Weiping; Li, Jinfeng

doi:10.1109/inec.2008.4585631

Cited by 2 publications

(2 citation statements)

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“…In Table I, observing the material prooerties, Si3N4 is chosen as a diaphragm material which is suitable for MEMS configurations and polysilicon is appropriate for piezoresistors, The placement of piezoresistors for the best suitable position to achieve maximum sensitivity will differ from 65 µm from the sides of the diaphragm, if the structural geometry differs or the materials are changed. The parametric analysis has modeled a piezoresistive pressure sensor with Si3N4 diaphragm, through the investigations of the sensitivity parameters by using ANSYS 14.5 simulation tool and MATLAB programming following the expressions from (1) to (12). It is observed that the most suitable design is a square diaphragm (s=1) made up of Si3N4 having a side length of 450µm and thickness of 4µm.…”

Section: Parametric Studymentioning

confidence: 99%

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Improved Sensitivity of MEMS-based Piezoresistive Pressure Sensor using Silicon Nitride Diaphragm

Das,

Dutta

2024

JICS

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In this paper, Piezoresistive Pressure Sensor (PPS) with four Polysilicon piezoresistors on Si3N4 diaphragm with improved sensitivity is successfully designed by using MEMS technology. Sensing is accomplished via deposited polysilicon resistors like metal resistors. The analytical model of PPS is optimized for location and geometry of the piezoresistors and the sensors based on different aspect ratios (both square and rectangular) have been investigated. The performance parameters like maximum deflection, maximum induced stress on the diaphragm have been compared using ANSYS and MATLAB simulation programming based on mathematical model. By interpreting the proper selection of the geometry of a thin Si3N4 diaphragm, the maximum deflection, maximum induced stress and highest sensitivity for this sensor are obtained for the diaphragm when aspect ratio is minimum. It has been found that sensitivity of the sensor is achieved when the piezoresistors are symmetrically placed at 65 m from the edges of the diaphragm. The analysis describes that the sensor based on square diaphragm is more sensitive than the rectangular one. It is influenced more powerfully by diaphragm thickness. The applied pressure range is considered from 0.5 kPa to 40 kPa. From the simulation results, the shape and the sensor design can be optimized for a highly sensitive PPS.

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Section: Parametric Studymentioning

confidence: 99%

“…et al [11]. Liu et al [12] highlighted the temperature characteristics of nano-films made of polysilicon using the technique of film configuration. It was described that the piezoresistive effect had increased with reducing nanowire dimensions [13,14].…”

Section: Introductionmentioning

confidence: 99%