DC electrical trimming characteristics of polysilicon nanofilms with different doping concentrations

Electrical Trimming Characteristics of Polysilicon Nanofilms with Different Doping Concentrations and Deposition Temperatures

“…The grain is seen as a small single crystal, and the properties of the grain boundary can be considered to be amorphous. The disordered state in amorphous silicon can be characterized as the accumulation of interstitial silicon atoms and vacancies, such as the IV pair model [6,8], as shown in Figure 12. The grain boundary of PSNF can be modeled by the accumulation of IV pairs.…”

“…The resistance values of trimmed PSNF resistors decrease almost linearly with an increase of the In PSNF, the grain is regarded as small single crystals, and the nature of the grain boundary can be considered to be amorphous. According to the work by Changzhi et al [6], the disordered states in amorphous silicon can be characterized as the accumulation of interstitial silicon atoms and vacancies; grain boundaries of PSNF can be modeled by the accumulation of IV pairs, where the state of each IV pair is dependent on the number of neighboring IV pairs. For polysilicon material, the grain boundary is considered to be comprised of continuous amorphous layers, and the number of IV pairs at grain boundary interfaces is lower than the number at the inner zones of grain boundaries.…”

“…The electrical trimming was performed by applying an incremental DC current to the PSNF resistors. The experimental results are explained by tunneling piezoresistive theory and the interstitial-vacancy (IV) pair model [6,7].…”