Temperature Characteristic Analysis of 808 nm Vertical Cavity Surface Emitting Laser Arrays

Jin-sheng, 张金胜 Zhang; Yongqiang, 宁永强 Ning; Jinlong, 张金龙 Zhang; Jianwei, 张建伟 Zhang; Jian, 张建 Zhang; Lijun, 王立军 Wang

doi:10.3788/fgxb20133412.1636

Cited by 2 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 8 reveals that the forbidden bandwidth is reduced when temperature is higher. This result agrees with the inversely proportional relationship between temperature and the forbidden bandwidth as shown in Equation (9). The decrease in the forbidden bandwidth is responsible for the increasing centre wavelength at a higher temperature.…”

Section: The Impact Of Temperature On V-i Curvessupporting

confidence: 89%

See 1 more Smart Citation

An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode

Liao¹,

Li²,

Mi³

et al. 2016

OPJ

View full text Add to dashboard Cite

This paper is focused on a 940 nm edge type of semiconductor laser, which is made from 940 nm InGaAs double-quantum-well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD). In the absence of coating, the efficiency at the room temperature is 0.89 W/A, and the averaged threshold current is 0.307 A. The present study investigates the impact of temperature on the P-I curve, V-I curve and the centre wavelength, the temperature ranging from 286.15-333.15 K. It shows that the threshold current increases from 0.28 A to 0.41 A with the increasing temperature. The increase rate is 0.0027 A/K. With the temperature ranging from 286.15-333.15 K, the characteristic temperature is calculated to be 120 K. At driven current of 2 A, the output power decreases from 1.47 W to 1.27 W at a rate of 0.00425 W/K. At a constant voltage, the output current initially increases with the temperature within a certain range, beyond which the impact of the temperature is minimum. The ideal factor obtained from V-I curve by curve fitting is 1.076. The series resistance is 0.609 Ω. The centre wavelength shifts to a longer wavelength with the increasing temperature at a rate of 0.275288 nm/K.

show abstract

Section: The Impact Of Temperature On V-i Curvessupporting

confidence: 89%

“…In 2013, Huang et al [8] studied the temperature sensitivity of 850 nm taper semiconductor laser diodes. In 2013, Zhang et al [9] performed analysis on 808 nm laser array vertical cavity surface. In 2016, Feng et al [10] conducted a study on the temperature sensitivity on 808 nm.…”

Section: Introductionmentioning

confidence: 99%