808 nm VCSELs Temperature Characteristic Study

Feng, Yan; Feng, Dawei; Liu, Pengcheng; Ma, Xiang; Hao, Yongqiang; Liu, Guojun; Yan, Chao; Wang, Yong; Li, Zaijin; Li, Yang

doi:10.1007/978-81-322-2580-5_72

Cited by 1 publication

(1 citation statement)

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“…In 2013, Zhang et al [9] performed analysis on 808 nm laser array vertical cavity surface. In 2016, Feng et al [10] conducted a study on the temperature sensitivity on 808 nm. For 940 nm wavelength semiconductor laser research, in 2013, Li et al [11] studied relaxation time in test of 940 nm semiconductor laser.…”

Section: Introductionmentioning

confidence: 99%

An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode

Liao¹,

Li²,

Mi³

et al. 2016

OPJ

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This paper is focused on a 940 nm edge type of semiconductor laser, which is made from 940 nm InGaAs double-quantum-well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD). In the absence of coating, the efficiency at the room temperature is 0.89 W/A, and the averaged threshold current is 0.307 A. The present study investigates the impact of temperature on the P-I curve, V-I curve and the centre wavelength, the temperature ranging from 286.15-333.15 K. It shows that the threshold current increases from 0.28 A to 0.41 A with the increasing temperature. The increase rate is 0.0027 A/K. With the temperature ranging from 286.15-333.15 K, the characteristic temperature is calculated to be 120 K. At driven current of 2 A, the output power decreases from 1.47 W to 1.27 W at a rate of 0.00425 W/K. At a constant voltage, the output current initially increases with the temperature within a certain range, beyond which the impact of the temperature is minimum. The ideal factor obtained from V-I curve by curve fitting is 1.076. The series resistance is 0.609 Ω. The centre wavelength shifts to a longer wavelength with the increasing temperature at a rate of 0.275288 nm/K.

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Section: Introductionmentioning

confidence: 99%