Temperature and energy dependences of capture cross sections at surface states in Si metal-oxide-semiconductor diodes measured by deep level transient spectroscopy

Katsube, Teruaki; Kakimoto, Koichi; Ikoma, Toshiaki

doi:10.1063/1.329128

Cited by 78 publications

(23 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…However, s 0 measured near the conduction band edge using the frequency associated with the peak in measured interface state conductance has been independently shown to be within the range of 1 ls to 10ls, consistent with the modeling results. 7,36 Furthermore, several researchers have reported very small electron capture cross-sections for energies in the valence or conduction band of Si, 37 GaAs, 38,39 and GaP (Ref. 38) using deep level transient spectroscopy (DLTS).…”

Section: Fitting Of Experimental Data Using the Bt And Digs Modelsmentioning

confidence: 99%

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Galatage

Zhernokletov

Dong

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inGate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices Effects of interface states and temperature on the C -V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors Interface states in polymer metal-insulator-semiconductor devices J. Appl. Phys. 98, 073710 (2005); 10.1063/1.2081109Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor depositionThe origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulatorsemiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric. V C 2014 AIP Publishing LLC.

show abstract

Section: Fitting Of Experimental Data Using the Bt And Digs Modelsmentioning

confidence: 99%

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Galatage

Zhernokletov

Dong

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Second, the change in the interface-state density (D it ) of the MOS capacitor was investigated as a function of the H 2 an-nealing conditions from the peaks and continuous spectrum analysis of the DLTS. To separately determine the energies and capture cross sections of the interface states, a smallpulse DLTS ͑SP-DLTS͒ method [6][7][8] was also adopted in this study.…”

mentioning

confidence: 99%

Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

Jeon

Park

Hwang

et al. 2003

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The capture cross section for electron emission and capture is strongly dependent on temperature at the interface and can be explained by the lattice-relaxation multiphonon emission model [23]. This model was proposed based on the temperature variation of the capture cross section of bulk levels in polar semiconductors such as GaAs and GaP.…”

Section: Dlts Studiesmentioning

confidence: 99%

Deep level transient spectroscopy studies on BaTiO₃and Ba_1–xCa_xTiO₃thin films deposited on Si substrates

Victor¹,

Krupanidhi²

2005

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Laser ablation grown BaTiO 3 and Ba 1-x Ca x TiO 3 thin films were studied in the metal-ferroelectric-semiconductor configuration by the deep level transient spectroscopy (DLTS) technique. The capture cross section, bulk and interface traps were determined from the DLTS technique. The distributions of calculated interface states were mapped with the silicon energy band gap for both the thin films. The interface states of the Ba 1-x Ca x TiO 3 thin films were found to be higher than the BaTiO 3 thin films. The substitution of Ca 2+ into the Ba 2+ sites of BaTiO 3 results in a decreased lattice constant, thereby leading to shrinkage in the unit cell. This might be one of the reasons for the higher density of interface states present in Ba 1-x Ca x TiO 3 , as it leads to a large number of unsaturated bonds at the interface of Si substrate-thin films. The calculated capture cross section of the interface traps in both the BaTiO 3 and Ba 1-x Ca x TiO 3 thin films was very low in the range of 10 −21 cm 2 .

show abstract

Temperature and energy dependences of capture cross sections at surface states in Si metal-oxide-semiconductor diodes measured by deep level transient spectroscopy

Cited by 78 publications

References 15 publications

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

Deep level transient spectroscopy studies on BaTiO₃and Ba_1–xCa_xTiO₃thin films deposited on Si substrates

Contact Info

Product

Resources

About

Temperature and energy dependences of capture cross sections at surface states in Si metal-oxide-semiconductor diodes measured by deep level transient spectroscopy

Cited by 78 publications

References 15 publications

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy

Deep level transient spectroscopy studies on BaTiO3and Ba1–xCaxTiO3thin films deposited on Si substrates

Contact Info

Product

Resources

About

Deep level transient spectroscopy studies on BaTiO₃and Ba_1–xCa_xTiO₃thin films deposited on Si substrates