2008
DOI: 10.1590/s0103-97332008000300001
|View full text |Cite
|
Sign up to set email alerts
|

Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application

Abstract: Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation. Electronic states within the conduction band valleys at the Γ, L and X are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in high electric fields leading to a strongly inverted electron distribution and to a large negat… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
3
0

Year Published

2016
2016
2022
2022

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 9 publications
(3 citation statements)
references
References 12 publications
0
3
0
Order By: Relevance
“…where τ dwell is the transit time through the DBQW structure, and τ dep is the transit time through the collector depletion region. The Nano-RTD has an electric field value of 1.6 × 10 3 kV/m, and then, it is possible to obtain the value of the carrier saturation velocity in GaAs, v s = 1.2 × 10 7 cm/s [17].…”
Section: Mathematical Framework and Methodologymentioning
confidence: 99%
“…where τ dwell is the transit time through the DBQW structure, and τ dep is the transit time through the collector depletion region. The Nano-RTD has an electric field value of 1.6 × 10 3 kV/m, and then, it is possible to obtain the value of the carrier saturation velocity in GaAs, v s = 1.2 × 10 7 cm/s [17].…”
Section: Mathematical Framework and Methodologymentioning
confidence: 99%
“…3 for GaAs. The velocity field curve for carriers in the  valley shows a slight NDM effect for doping concentrations below about 5x10 16 cm -3 [32,33], which has not been included in this work for the following reasons. (i) The low impurity concentrations where this effect occurs are of little relevance in advanced high-speed HBTs.…”
Section: Velocity Formulationmentioning
confidence: 99%
“…The observed damping is consistent with THz electric field induced intervalley scattering (Γ L) resulting in a decrease in the average electron mobility. 41 To gain insight into the nonlinear response of the InAs disks, we modeled the PSMMs using CST Microwave Studio utilizing the Drude model to describe the electromagnetic response of InAs (see supplementary information for details). In agreement with experiment, the simulated resonant response at ~0.77 THz corresponds to the dipolar plasmonic mode of the disk structure.…”
mentioning
confidence: 99%