Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application

Abstract

Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation. Electronic states within the conduction band valleys at the Γ, L and X are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in InAs and AlAs is less sensitive to temperature than in other III-V semiconductors like GaAs and AlGaAs. So InAs and AlAs devices are expected be more tolerant to self-heating and high ambient temperature device modeling. Our steady-state velocity-field characteristics are in fair agreement with other recent calculations.

Performance Analysis of a Nanocolumn-RTD VCO for Emerging THz Wireless Applications

“…where τ dwell is the transit time through the DBQW structure, and τ dep is the transit time through the collector depletion region. The Nano-RTD has an electric field value of 1.6 × 10 3 kV/m, and then, it is possible to obtain the value of the carrier saturation velocity in GaAs, v s = 1.2 × 10 7 cm/s [17].…”

1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices

“…3 for GaAs. The velocity field curve for carriers in the  valley shows a slight NDM effect for doping concentrations below about 5x10 16 cm -3 [32,33], which has not been included in this work for the following reasons. (i) The low impurity concentrations where this effect occurs are of little relevance in advanced high-speed HBTs.…”

Determination of Band Structure and Compton profiles for Aluminum-Arsenide Using Density Functional Theory

“…They have come to a satisfactory accord. The electrical, optical, and structural characteristics of AlAs are the subject of a variety of theoretical investigations [3,[17][18][19][20][21][22][23][24][25]. However, because to its high hygroscopicity [26][27][28][29], very few experimental experiments are conducted on bulk AlAs.…”