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An ensemble Monte Carlo simulation has been used to model bulk electron transport at room and higher temperatures as a function of high electric fields. Electronic states within the conduction band valleys at the Γ 1 , U , M , Γ 3 and K are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in GaN is less sensitive to temperature than in other III-V semiconductors like GaAs. So GaN devices are expected to be more tolerant to selfheating and high ambient temperature device modeling. Our steady state velocity-field characteristics are in fair agreement with other recent calculations. Keywords: Ensemble Monte Carlo; ellipsoidal valleys; Brillouin zone; device modeling. 3915 Int. J. Mod. Phys. B 2008.22:3915-3922. Downloaded from www.worldscientific.com by UNIVERSITY OF CALIFORNIA @ SANTA CRUZ on 02/03/15. For personal use only. 3916 A. R. Binesh et al.

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