TEM investigations of the tungsten silicide films on silicon

Two differently structured WSiz phases were formed by direct W ion implantation, for the first time, into silicon wafers using a metal vapour vacuum arc ion source. Implantation of W ions was conducted with an extract voltage of 40 kV, various beam densities from 50 to I I5 p A cm-' and a fixed dose of 5 x IOt7 cm-'. It was found that the formation of WSh with either a hexagonal or a tetragonal stmctm depended on the ion current density. The temperature rise caused by beam heating and the beam-striking time related to the dose were calculated, and they were responsible for the fomtion and evolution related to the differently StNCtUed WSh phases.

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TEM investigations of the tungsten silicide films on silicon

Cited by 4 publications

References 11 publications

Influence of annealing temperature on structural, electrical and optical properties of WSi2

Influence of annealing temperature on structural, electrical and optical properties of WSi2

Applications of transmission electron microscopy to microstructural studies of epitaxial thin films

A preliminary study of the formation of WSi₂by high-current W ion implantation

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TEM investigations of the tungsten silicide films on silicon

Cited by 4 publications

References 11 publications

Influence of annealing temperature on structural, electrical and optical properties of WSi2

Influence of annealing temperature on structural, electrical and optical properties of WSi2

Applications of transmission electron microscopy to microstructural studies of epitaxial thin films

A preliminary study of the formation of WSi2by high-current W ion implantation

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Product

Resources

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A preliminary study of the formation of WSi₂by high-current W ion implantation