Influence of annealing temperature on structural, electrical and optical properties of WSi2

Amiotti, M.; Bellandi, Enrico; Borghesi, A.; Piaggi, A.; Guizzetti, G.; Nava, F.; Queirolo, G.

doi:10.1007/bf00323908

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Phase Formation Of Wsiz1

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1992

1995

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Cited by 5 publications

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“…As can be seen from figure l(c), the hexagonalto-tetragonal phase transformation began to take place when the ion current density was increased to 90 pA c&. On implantation at an ion current density of 115 pA cm-*, the tetragonal WSiz phase was formed, which accorded with [14], and coexisted with its hexagonal counterpart (figure l(d)).…”

Section: Phase Formation Of Wsizmentioning

confidence: 93%

A preliminary study of the formation of WSi₂by high-current W ion implantation

Zhu

Han

Tao

et al. 1993

J. Phys.: Condens. Matter

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Two differently structured WSiz phases were formed by direct W ion implantation, for the first time, into silicon wafers using a metal vapour vacuum arc ion source. Implantation of W ions was conducted with an extract voltage of 40 kV, various beam densities from 50 to I I5 p A cm-' and a fixed dose of 5 x IOt7 cm-'. It was found that the formation of WSh with either a hexagonal or a tetragonal stmctm depended on the ion current density. The temperature rise caused by beam heating and the beam-striking time related to the dose were calculated, and they were responsible for the fomtion and evolution related to the differently StNCtUed WSh phases.

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Section: Phase Formation Of Wsizmentioning

confidence: 93%