Tellurium and sulfur doped GaSe for mid-IR applications

Set of Sellmeier equations for GaS and GaSe and its applications to the nonlinear optics in GaSxSe1−x

“…The resulting tuning curves (solid lines) are shown in Figs. 1 and 2 together with the experimental points given by Zhang et al [3] and Kang et al [4] and those of ours. For reference, we have also inserted the tuning curves (dashed lines) for GaS 0.4 Se 0.6 calculated with the Sellmeier equations of Marchev et al [6] into these figures.…”

“…We believe that this set of Sellmeier equations is highly useful to predict the phase-matching conditions of GaS x Se 1−x crystals for DFG between the signal and idler outputs of the Nd:YAG laser-pumped KTiOAsO 4 KTA∕OPO up to 14 μm. Open circles, experimental points taken from [3,4]; open triangle, our experimental points. Fig.…”

“…Equation (3) was obtained by adjusting the refractive indices in the mid-IR given by the index formula presented in [2] so as to give the best fit to the abovementioned data points for SHG and SFG in the Meanwhile, Kang et al [4] reported the phasematching angles for type-1 SHG of a Ti:Al 2 O 3 laser-pumped BBO/OPG at 2.14-2.9 μm and the CO 2 laser lines at 9.29.2007 − 10.710.6746 μm in GaS 0.09 Se 0.91 and GaS 0.41 Se 0.59 at room temperature. Thus, we have computed the phase-matching angles for SHG in these two crystals by using Eq.…”

“…The resulting data were used to refine the Sellmeier equations for GaS that reproduce well the abovementioned data points of Zhang et al [3] as well as the recently published data points of Kang et al [4] for type-1 SHG of a Ti:Al 2 O 3 laser-pumped BBO optical parametric generator (OPG) at 2.14-2.9 μm and the CO 2 laser lines at 9.29.2007 − 10.710.6746 μm in GaS 0.09 Se 0.91 and GaS 0.41 Se 0.59 .…”

Terahertz generation from electron- and neutron-irradiated semiconductor crystal surfaces

“…Gallium selenide, GaSe, is a well known nonlinear crystal which is widely used in IR and terahertz nonlinear optics [5][6][7][8][9][10][11][12]. Because of a pronounced layered structure, the GaSe (0 0 1) optical surface can be prepared by mechanical cleavage [5,[13][14][15][16].…”