Abstract-The paper presents research results on two-component waveguide films SiO 2 :TiO 2 produced in sol-gel technology. The waveguide films were deposited on soda-lime glass substrates using the dip-coating method. For the produced waveguide films, the dispersion characteristics of the refractive index and of the extinction coefficient were determined. The AFM method was used to investigate the typology of waveguide film surfaces. The attenuation of waveguide films was determined using the streak method. [7]. In chemical vapour deposition methods and in the sol-gel method, uniform waveguide films are produced whereof refractive index can be controlled within a wide range. Such methods can be applied to produce waveguide structures having high-contrast refractive indexes and low attenuation. The paper presents the research results involving two-component waveguide films SiO 2 :TiO 2 produced in sol-gel technology. The waveguide films were deposited on soda-lime glass substrates using the dip-coating method. The properties of the waveguide films have been presented with a particular emphasis placed on their attenuation. As the precursors of silica (SiO 2 ) and titania (TiO 2 ) we applied respectively tetraetoxysilane Si(OC 2 H 5 ) 4 (TEOS) and tetraetoxytitanate (TET). Ethanol (C 2 H 5 OH) was used as a homogenizing agent, and hydrochloric acid HCl as a catalyst. For the produced sols, the molar ratio TEOS:TET was 1. After the deposition of sols on glass substrates, the structures were heated at 500°C for 60min. The thickness of the produced waveguide films was controlled through a substrate withdrawal speed.The dispersion characteristics of the films SiO 2 :TiO 2 were determined with the application of the spectral ellipsometer Woollam M2000 (λ=200±1700nm). The dispersion characteristics of the refractive index n and of the extinction coefficient ĸ are presented in Fig.1. These relations, and in particular the dispersion characteristic of the refractive index is indispensable in the designing process of planar elements or systems produced with the application of the presented waveguide films. Fig.2 presents the topography image of a waveguide film surface obtained with the use of an atomic force microscope AFM. The surface root mean square roughness determined for the whole area 1×1µm 2 was σ rms =0.225nm. Roughness is one of the basic parameters characterizing surface quality. Attenuation measurements were carried out using the streak method. The setup of such a measuring system is presented in Fig.3. Planar waveguides SW were excited using a prism coupler PC. A laser diode LD (λ=677nm)