Technology for the design of low-power circuits

Bittman, C.A.; Wilson, G.; Whittier, R.J.; Waits, K.; Foglesong, R.

doi:10.1109/jssc.1970.1050062

Cited by 10 publications

(2 citation statements)

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“…The ideality factor is a measure for the emitter efficiency and typically lies in the range 1–4 for planar devices. [ 43,44 ] Extracting

n_{BE,I}

from the slope of

I_{normalB}

versus

V_{BE}

yields 7.5, suggesting that the additional tunneling leakage currents through the BE junction of NWs from sample I (Figure 4a) thwart the classical leakage currents considered in the general description of a planar device. At higher

V_{BE}

, both

I_{normalC}

and

I_{normalB}

saturate due to external contact and path resistances in the base and emitter, dominating the voltage drop.…”

Section: Resultsmentioning

confidence: 99%

“…Here,

n_{BE,III}

reduces to 3, which now lies in the range found in typical planar devices. [ 43,44 ] The reduction in

I_{normalB}

and

n_{BE,III}

is attributed to the decreased tunneling probability of charge carriers due to the wider SCR in the BE junction, resulting in improved emitter efficiency. In comparison with sample I, the BE diode's saturation current is reduced by almost three orders of magnitude (Figure 4a), showing a clear correlation between emitter efficiency and transistor action.…”

Section: Resultsmentioning

confidence: 99%

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Tunneling‐Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors

Liborius

Bieniek

Possberg

et al. 2020

Physica Status Solidi (b)

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Herein, a detailed analysis of leakage mechanisms in epitaxially grown nanowire heterojunction bipolar transistors (NW‐HBTs) is presented. Coaxial npn‐GaAs/InGaP core–multishell nanowires are grown via gold‐catalyzed metalorganic vapor phase epitaxy, processed to three terminal devices and electrically characterized. The key for successful NW‐HBT device functionality is the identification of tunneling as the dominant leakage mechanism in highly doped nanowire pn‐junctions. The suppression of forward tunneling currents by adjustment of the tunneling barrier width reduces the junction leakage current density into the nA cm−2 regime, which is further verified by tunneling‐related electroluminescence measurements. In addition, the suppressed tunneling accordingly increases the number of electrons that are injected from the n‐emitter into the p‐base. The latter effect influences the performance of pn‐junction based devices and is found to enable bipolar transistor functionality. Measured common emitter Gummel plots of the NW‐HBT exhibit a current gain of up to 9 and the transistor function is additionally verified by current‐controlled output characteristics.

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“…The ideality factor is a measure for the emitter efficiency and typically lies in the range 1–4 for planar devices. [ 43,44 ] Extracting