Physical origins of burst noise in transistors

Cook, Karen; Brodersen, A.J.

doi:10.1016/0038-1101(71)90112-2

Cited by 19 publications

(1 citation statement)

References 9 publications

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“…Figure 1 is given to illustrate this mechanism. In semi-conductor devices, one of the sources of randomness is from the shift in the D.C. current, also known as the burst noise [12]. This phenomenon happens because of the modulation of the current flowing over a physical barrier.…”

Section: Random Number Generatormentioning

confidence: 99%

Delay-Based True Random Number Generator in Sub-Nanomillimeter IoT Devices

2020

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True Random Number Generators (TRNGs) use physical phenomenon as their source of randomness. In electronics, one of the most popular structures to build a TRNG is constructed based on the circuits that form propagation delays, such as a ring oscillator, shift register, and routing paths. This type of TRNG has been well-researched within the current technology of electronics. However, in the future, where electronics will use sub-nano millimeter (nm) technology, the components become smaller and work on near-threshold voltage (NTV). This condition has an effect on the timing-critical circuit, as the distribution of the process variation becomes non-gaussian. Therefore, there is an urge to assess the behavior of the current delay-based TRNG system in sub-nm technology. In this paper, a model of TRNG implementation in sub-nm technology was created through the use of a specific Look-Up Table (LUT) in the Field-Programmable Gate Array (FPGA), known as SRL16E. The characterization of the TRNG was presented and it shows a promising result, in that the delay-based TRNG will work properly, with some constraints in sub-nm technology.

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Section: Random Number Generatormentioning

confidence: 99%

Delay-Based True Random Number Generator in Sub-Nanomillimeter IoT Devices

2020

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Ein mögliches Modell des Stoßrauschens in pn-Übergängen

Eigler

Gaebel

1980

Phys. Stat. Sol. (a)

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P. GORLICR zum 75. Geburtstag gewidmet An npn-Planar-Epitaxie-Transistoren wird zur Ermittlung der Ursachen des StoBrauschens die Temperatur-und Spannungsabhkngigkeit des StoSrauschens beim aktiven Betrieb der Transistoren gemessen. Es wird ein Modell fiir das Stoljrauschen vorgeschlagen, nach dem die Impulsbreite durch den Einfang von Elektronen (oder Lijchern) auf Au-Niveaus bestimmt wird, die Impulspause jedoch durch Ladungstrigeremission von flacheren Niveaus, die sich dem Si-0-Si-Komplex zuordnen lassen. Es wird angenommen, daB es sich dabei um das Elektron eines Exzitons handelt, das beim Einfang durch das tieferliegende Zentrum entsteht und das durch das weniger tiefliegende Niveau eingefangen wird.

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