Technology and characterization of ISFET structures with graphene membrane

Kondracka, Kinga; Firek, Piotr; Caban, P.; Przewłoka, Aleksandra; Szmidt, J.

doi:10.1117/12.2536746

Cited by 1 publication

(1 citation statement)

References 17 publications

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“…DLC (diamond-like carbon), AlN, Al 2 O 3 ) [1,7,8] or 2D materials (e.g. graphene) [9] can be applied instead of commonly used stacked gate structure of Si 3 N 4 /SiO 2 . We propose to apply a new nanocomposite of carbon-palladium (C-Pd) film for this purpose.…”

Section: Introductionmentioning

confidence: 99%

Metrology and Measurement Systems

Firek,

Krawczyk,

Wronka

et al. 2020

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ISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sensitive membranes. For example, hydrogen sensitive carbonaceous films containing Pd nanocrystallites (C-Pd) make this material very interesting for sensor applications. A cost effective silicon technology was selected to fabricate n-channel transistors. The structures were coupled to specially designed double-sided PCB (Printed Circuit Board) holder. The holder enables assembly of the structure as part of an automatic stand. The last step of production of MIS structures was deposition of the C-Pd layer. The C-Pd films were fabricated by the Physical Vapor Deposition (PVD) method in which C60 and palladium acetate were evaporated. Electrical resistance of structures with C-Pd films was measured during their interaction with hydrogen. Finally, a new type of highly sensitive FET hydrogen sensor with C-Pd layer was demonstrated and characterized.

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