Technical Report: Absolute Radiometric Calibration at NSLS

Keister, Jeffrey W.

doi:10.1080/08940880600864566

Cited by 1 publication

(1 citation statement)

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“…The detectors fabricated in our laboratory at UofSC using n-type 4H-SiC epitaxial layers were also tested and evaluated at Los Alamos National Laboratory (LANL, Los Alamos, NM, USA) for detecting low energy X-rays and compared to commercial-off-the-self (COTS) SiC UV photodiode detectors. The measurements were performed at 20-250 V bias voltages using U3C and X8A beam lines [13] at the National Synchrotron Light Sources (NSLS) at Brookhaven National Laboratory (BNL, New York, NY, USA). This beam line provides monochromatic photon beams ranging from 50 to 6500 eV with intensities as high as 10 12 photons/second.…”

Section: Methodsmentioning

confidence: 99%

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

2020

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Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8 mm 4H-SiC epitaxial layer wafers with an active area of ≈11 mm2. The thicknesses of the actual epitaxial layers were either 20 or 50 µm. The article reviews the investigation of defect levels in 4H-SiC epilayers and radiation detection properties of Schottky barrier devices (SBDs) fabricated in our laboratories at UofSC. Our studies led to the development of miniature SBDs with superior quality radiation detectors with highest reported energy resolution for alpha particles. The primary findings of this article shed light on defect identification in 4H-SiC epilayers and their correlation with the radiation detection properties.

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Section: Methodsmentioning

confidence: 99%