2010
DOI: 10.1109/tns.2010.2042617
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Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects

Abstract: Abstract-Both Te inclusions and point defects can trap the charge carriers generated by ionizing particles in CdZnTe (CZT) detectors. The amount of charge trapped by point defects is proportional to the carriers' drift time and can be corrected electronically. In the case of Te inclusions, the charge loss depends upon their random locations with respect to the electron cloud. Consequently, inclusions introduce fluctuations in the charge signals, which cannot be easily corrected. In this paper, we describe dire… Show more

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Cited by 52 publications
(39 citation statements)
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“…Figure 5a shows a typical 3D volumetric distribution of Te inclusions/precipitations over the volume of 1x1.5x3 mm 3 for CZT grown using our THM method. The total concentration of the Te inclusions/precipitations over the scanned volume was estimated to be 1.3x10 5 cm -3 and is comparable to the recently reported value for commercially available CZT samples [11]. The size distribution of the Te inclusions/precipitations over the same volume is shown in Fig.…”
Section: Resultssupporting
confidence: 86%
See 1 more Smart Citation
“…Figure 5a shows a typical 3D volumetric distribution of Te inclusions/precipitations over the volume of 1x1.5x3 mm 3 for CZT grown using our THM method. The total concentration of the Te inclusions/precipitations over the scanned volume was estimated to be 1.3x10 5 cm -3 and is comparable to the recently reported value for commercially available CZT samples [11]. The size distribution of the Te inclusions/precipitations over the same volume is shown in Fig.…”
Section: Resultssupporting
confidence: 86%
“…histogram extends below 10 µm, and was consistent at different positions of the wafers and also for different ingots, while the distribution was recently reported to be extend from 15-25 µm for many commercially available CZT samples [11]. It is also evident that most of the concentrations are around or below 3 µm as shown in Fig.…”
Section: Resultssupporting
confidence: 81%
“…The wafers possessed a similar resistivity of >3x10 10 Ohm-cm, and an electron μτ-product of >7x10 -3 cm 2 /V, as measured by the vendor. Later, our more accurate measurements of the μτ-products yielded a typical value of >2x10 -2 cm 2 /V.…”
Section: Methodsmentioning
confidence: 77%
“…Later, our more accurate measurements of the μτ-products yielded a typical value of >2x10 -2 cm 2 /V. First, we characterized the wafers using IR transmission microscopy to measure the concentrations and size distributions of Te inclusions by taking "in depth" images of 1.1x1.5 mm 2 areas at different locations [10]. The concentration of Te inclusions was the same within a factor of ~2 over the wafers' areas, except for the regions containing decorated grain boundaries.…”
Section: Methodsmentioning
confidence: 99%
“…However, the material's inhomogeneity in bulk grown detectorgrade CZT crystals, especially due to the structure imperfections, still creates a 'bottle-neck' in state of the art wafer assessment and screening, which has consequently reduced the availability and increased the cost of CZT materials. These commercial restrictions have prevented the wide-spread adoption of CZT for various general applications, such as medical imaging, industrial monitoring and national security [7,8].…”
Section: Introductionmentioning
confidence: 99%