TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

Meng, Qingzhi; Lin, Qijing; Jing, Weixuan; Han, Feng; Zhao, Man

doi:10.1109/ted.2018.2869291

Cited by 12 publications

(8 citation statements)

References 31 publications

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“…In room temperature non-resonant detection mode, the response signal of the detector is mainly influenced by the thickness of the barrier layer and the distance between two channels. The thicker barrier can supply larger 2DEG density while reducing the gate control capability [ 22 ]. The barrier height of the two channels is mainly related to the distance of the upper and lower channel.…”

Section: Detection Mechanism For DC Gan/algan Hemt Detectormentioning

confidence: 99%

“…In our previous work [ 22 ], we designed the dimensions of the GaN HEMT detector including the epitaxial layer structure and gate length. In this paper, we designed a microstrip patch antenna with a center frequency of 315 GHz with a high-frequency structure simulator (HFSS).…”

Section: Design and Experimental Proceduresmentioning

confidence: 99%

“…Based on the optimized device structure parameters in Ref. [ 22 ], the impedance of gate to source simulated by Silvaco is

= 71.35 − j69.52 Ω, and the corresponding Z f equals 99.6 Ω. Then the width of the feedline W f is calculated as:

…”

Section: Design and Experimental Proceduresmentioning

confidence: 99%

“…Therefore, the improvement of the epitaxial layer material property will enhance the THz detector performance. In our previous work [ 22 ], we proposed a GaN/AlGaN DC HEMT THz detector and optimized its structure parameters by technology computer-aided design (TCAD) simulation software, which theoretically predicted that GaN/AlGaN DC HEMT could be used as a THz detector. Here, a DC GaN/AlGaN HEMT THz detector was prepared, and the responsivity R v and noise equivalent power (NEP) were measured at 315 GHz THz radiation.…”

Section: Introductionmentioning

confidence: 99%

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A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

et al. 2021

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A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the performance of the GaN HEMT THz detector is improved. The maximum responsivity of 10 kV/W and minimum noise equivalent power (NEP) of 15.5 pW/Hz0.5 are obtained at the radiation frequency of 315 GHz. The results are comparable to and even more promising than the reported single-channel (SC) GaN HEMT detectors. The enhancement of THz response and the reduction of NEP of the DC GaN HEMT detector mainly results from the interaction of 2DEG in the upper and lower channels, which improves the self-mixing effect of the detector. The promising experimental results mean that the proposed DC GaN/AlGaN HEMT THz detector is capable of the practical applications of THz detection.

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Section: Detection Mechanism For DC Gan/algan Hemt Detectormentioning

confidence: 99%

Section: Design and Experimental Proceduresmentioning

confidence: 99%

“…Based on the optimized device structure parameters in Ref. [ 22 ], the impedance of gate to source simulated by Silvaco is

= 71.35 − j69.52 Ω, and the corresponding Z f equals 99.6 Ω. Then the width of the feedline W f is calculated as:

…”

Section: Design and Experimental Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

et al. 2021

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“…The TCAD simulator has been widely used in attempts to evaluate the MOS-FET rectification process, with different approaches. In Reference [18], the characterization was conducted in transient time by an examination of the drain voltage, extracting DC and harmonics by Fourier transform.…”

Section: Analytical Interpretation and Numerical Simulatormentioning

confidence: 99%

New Insight on Terahertz Rectification in a Metal–Oxide–Semiconductor Field-Effect Transistor Structure

Palma

2020

Electronics

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The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification of electromagnetic radiation by employing integrated circuit technology. However, obtaining a high-efficiency rectification device requires the assessment of a physical model capable of providing a qualitative and quantitative explanation of the processes involved. For a long time, high-frequency detection based on MOS technology was explained using plasma wave detection theory. In this paper, we review the rectification mechanism in light of high-frequency numerical simulations, showing features never examined until now. The results achieved substantially change our understanding of terahertz (THz) rectification in semiconductors, and can be interpreted by the model based on the self-mixing process in the device substrate, providing a new and essential tool for designing this type of detector.

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Nonresonant Terahertz Detector Based on Improved N‐Polar AlGaN/GaN Plasma Wave High‐Electron‐Mobility Transistors

Dai,

Yuan,

et al. 2024

Physica Status Solidi (b)

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The THz photoresponse of four different structures of N‐ and Ga‐polar AlGaN/GaN plasma wave high‐electron‐mobility transistors (HEMTs) has been comparatively investigated. Based on these results, an improved N‐polar plasma wave HEMT detector is proposed: an AlGaN cap layer is introduced in the standard N‐polar HEMT, so as to obtain a lower gate leakage current, thus improving the operating characteristics of plasma wave HEMT. The results show that the responsivity of the improved N‐polar HEMT obtains a significant improvement and as the Al component of AlGaN cap layer increases, the noise equivalent power of the improved N‐polar HEMT has also been optimized.

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TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

Cited by 12 publications

References 31 publications

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

New Insight on Terahertz Rectification in a Metal–Oxide–Semiconductor Field-Effect Transistor Structure

Nonresonant Terahertz Detector Based on Improved N‐Polar AlGaN/GaN Plasma Wave High‐Electron‐Mobility Transistors

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