TCAD modeling for reliability

Numerical analysis of the effect of illumination intensity on photoelectric parameters of the silicon solar cell with various metal nanoparticles

“…The most reliable and best-known programs among them are: Sentaurus TCAD, Lumerical, Silvaco TCAD as well as Comsol Multiphysics. Among their advantages, the obtained results are more reliable and often are similar to experimental results [6][7][8]. Besides, from prior literature, some information about the comparing experiment results and simulation results, which are obtained by using TCAD programs, are given [9,10].…”

“…In Sentaurus Device, "Drift-Diffusion", "Thermodynamic", "Hydrodynamic" and "Monte Carlo" models are used to calculate carrier transport. The "Thermodynamic" models, which are given in formulas ( 6) and (7), have been used to model solar cell, since, generation and recombination rate of carriers is changed when light intensity is changed. Additionally, heat energy or phonon concentration can also be changed.…”

“…Therefore, heat energy, which is formed due to motion of carriers, also changed. All of these have been taken into account in "Thermodynamic" models, which are given formulas ( 6) and (7).…”

Characterization and Modeling of BTI in SiC MOSFETs

“…In the last years, several methods have been proposed to describe such kind of phenomena in the TCAD framework [7], [8], [12], [13], [14]. Among them, the reaction-diffusion model by Alam [7] has been demonstrated to be an effective physically-based approach which nicely predicts NBTI reliability data [5]. Here, we adopted the reaction-diffusion degradation equations to investigate the PBTI curves for stress times up to 10 4 s and different temperatures.…”

“…In addition to this, the origin and energetic distribution of defects in SiC/SiO 2 systems is still unclear and needs further investigation. To this purpose, TCAD modeling and simulation can be used to effectively study and analyze reliability issues in semiconductor devices, as it has been demonstrated to be a comprehensive tool [5]. In particular, the reaction-diffusion model implemented in the Synopsys TCAD solver has been proven to emphasize the physical aspects of the interface degradation and recovery under BTI phenomena [6] [7] [8].…”