Numerical analysis of the effect of illumination intensity on photoelectric parameters of the silicon solar cell with various metal nanoparticles

Gulomov, Jasurbek; Алиев, Р.

doi:10.17586/2220-8054-2021-12-5-569-574

Cited by 8 publications

(6 citation statements)

References 19 publications

(24 reference statements)

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“…The Transfer Matrix Method (TMM) and Ray Tracing methods were utilized for optical simulation. The Ray Tracing method is mainly used to model textured solar cells [ 34 ] while multilayer planar solar cells are modeled in TMM [ 35 ] since it also takes into account the interference phenomena in the layers of solar cells. In this scientific work, since the MoO 3 /Si solar cell is planar, its optical properties were determined using TMM given in Formula (1).…”

Section: Methodsmentioning

confidence: 99%

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

et al. 2022

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Metal oxides are commonly used in optoelectronic devices due to their transparency and excellent electrical conductivity. Based on its physical properties, each metal oxide serves as the foundation for a unique device. In this study, we opt to determine and assess the physical properties of MoO3 metal oxide. Accordingly, the optical and electronic parameters of MoO3 are evaluated using DFT (Density Functional Theory), and PBE and HSE06 functionals were mainly used in the calculation. It was found that the band structure of MoO3 calculated using PBE and HSE06 exhibited indirect semiconductor properties with the same line quality. Its band gap was 3.027 eV in HSE06 and 2.12 eV in PBE. Electrons and holes had effective masses and mobilities of 0.06673, −0.10084, 3811.11 cm2V−1s−1 and 1630.39 cm2V−1s−1, respectively. In addition, the simulation determined the dependence of the real and imaginary components of the complex refractive index and permittivity of MoO3 on the wavelength of light, and a value of 58 corresponds to the relative permittivity. MoO3 has a refractive index of between 1.5 and 3 in the visible spectrum, which can therefore be used as an anti-reflection layer for solar cells made from silicon. In addition, based on the semiconducting properties of MoO3, it was estimated that it could serve as an emitter layer for a solar cell containing silicon. In this work, we calculated the photoelectric parameters of the MoO3/Si heterojunction solar cell using Sentaurus TCAD (Technology Computing Aided Design). According to the obtained results, the efficiency of the MoO3/Si solar cell with a MoO3 layer thickness of 100 nm and a Si layer thickness of 9 nm is 8.8%, which is 1.24% greater than the efficiency of a homojunction silicon-based solar cell of the same size. The greatest short-circuit current for a MoO3/Si heterojunction solar cell was observed at a MoO3 layer thickness of 60 nm, which was determined by studying the dependency of the heterojunction short-circuit current on the thickness of the MoO3 layer.

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Section: Methodsmentioning

confidence: 99%

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

et al. 2022

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“…The Sentaurus TCAD has a Transfer Matrix Method (TMM), Beam Propagating Method (BPM), and Ray Tracing Method to determine the optical properties. In this study, the TMM given in Equation (1) was used to determine the optical properties of solar cells as it considers the phenomenon of interference in thin layers [ 44 ]. Consequently, this method is the most suitable option for studying the effect of layer thickness on the properties of the solar cell.…”

Section: Methodsmentioning

confidence: 99%

Geometric Optimization of Perovskite Solar Cells with Metal Oxide Charge Transport Layers

et al. 2022

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Perovskite solar cells (PSCs) are a promising area of research among different new generations of photovoltaic technologies. Their manufacturing costs make them appealing in the PV industry compared to their alternatives. Although PSCs offer high efficiency in thin layers, they are still in the development phase. Hence, optimizing the thickness of each of their layers is a challenging research area. In this paper, we investigate the effect of the thickness of each layer on the photoelectric parameters of n-ZnO/p-CH3NH3PbI3/p-NiOx solar cell through various simulations. Using the Sol–Gel method, PSC structure can be formed in different thicknesses. Our aim is to identify a functional connection between those thicknesses and the optimum open-circuit voltage and short-circuit current. Simulation results show that the maximum efficiency is obtained using a perovskite layer thickness of 200 nm, an electronic transport layer (ETL) thickness of 60 nm, and a hole transport layer (HTL) thickness of 20 nm. Furthermore, the output power, fill factor, open-circuit voltage, and short-circuit current of this structure are 18.9 mW/cm2, 76.94%, 1.188 V, and 20.677 mA/cm2, respectively. The maximum open-circuit voltage achieved by a solar cell with perovskite, ETL and HTL layer thicknesses of (200 nm, 60 nm, and 60 nm) is 1.2 V. On the other hand, solar cells with the following thicknesses, 800 nm, 80 nm, and 40 nm, and 600 nm, 80 nm, and 80 nm, achieved a maximum short-circuit current density of 21.46 mA/cm2 and a fill factor of 83.35%. As a result, the maximum value of each of the photoelectric parameters is found in structures of different thicknesses. These encouraging results are another step further in the design and manufacturing journey of PSCs as a promising alternative to silicon PV.

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“…Also, since it is a 1D dimensional modeling program, it mainly uses the Transfer Matrix Method (TMM) [21] to determine the optical properties. However, absorption, transmission and reflection coefficients are not output as a result, instead the generation rate in the layers is calculated using the Burger-Lambert law [22].…”

Section: Theorymentioning

confidence: 99%

The Effect of Temperature and Base Thickness on Photoelectric Parameters of Amorphous Silicon Solar Cells

Gulomov¹,

Ziyoitdinov²,

Gulomova³

2022

J. Nano- Electron. Phys.

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One of the important tasks of photovoltaics is the design of flexible solar cells that are resistant to environmental influences and designed to cover surfaces of various shapes. Therefore, pin-structured amorphous silicon-based solar cells with flexible properties were studied in this study. Amorphous silicon has a higher absorption coefficient and band gap than crystalline silicon. A high absorption coefficient proves that a high efficiency can be achieved in thin films. According to the obtained simulation results, the maximum values of the open circuit voltage, short-circuit current, fill factor and efficiency of the amorphous silicon-based solar cell were 1.2044 V, 13.49 mA/cm 2 , 80.03 % and 12.18 %, respectively, as well as achieved them at a base thickness of 35, 20, 3 and 15 µm, respectively. The effect of temperature on an amorphous silicon-based solar cell with optimal thickness was studied because amorphous silicon is very sensitive to external influences such as light intensity and temperature. Therefore, it is important to study the effect of temperature on the properties of amorphous silicon-based solar cells. As the temperature increased, the open circuit voltage decreased, but the short-circuit current, fill factor, and efficiency increased. It was found that the temperature coefficients of open circuit voltage, short circuit current, fill factor and efficiency are − 1.68×10 -3 , 2.24×10 -3 , 4.5×10 -5 and 2.27×10 -4 1/K, respectively.

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Numerical analysis of the effect of illumination intensity on photoelectric parameters of the silicon solar cell with various metal nanoparticles

Cited by 8 publications

References 19 publications

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

Geometric Optimization of Perovskite Solar Cells with Metal Oxide Charge Transport Layers

The Effect of Temperature and Base Thickness on Photoelectric Parameters of Amorphous Silicon Solar Cells

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