TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs

Tiwari, Ravi; Choudhury, Nilotpal; Samadder, Tarun; Mukhopadhyay, Subhadeep; Parihar, Narendra; Mahapatra, S.

doi:10.23919/sispad49475.2020.9241687

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2020

DOI: 10.23919/sispad49475.2020.9241687

|View full text |Cite

TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs

Ravi Tiwari

Nilotpal Choudhury

Tarun Samadder

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs

Cited by 1 publication

References 10 publications

A physics-based TCAD framework for NBTI

A physics-based TCAD framework for NBTI

Contact Info

Product

Resources

About